BFP450H6327XTSA1 Infineon

BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Product description The BFP450 is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineons established fourth generation RF bipolar transistor family. Its transition frequency f of 24 GHz, collector design and high linearity characteristics make the T device suitable for energy efficienc y applications up to 3 GHz. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 1.7 dB at 1.9 GHz, 3 V, 50 mA min High gain G = 15.5 dB at 1.9 GHz, 3 V, 90 mA ma OIP = 31 dBm at 1.9 GHz, 3 V, 90 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Broadband amplifiers Low noise, high linearity amplifiers for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP450 / BFP450H6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E ANs 3000 BFP450 / BFP450H6433XTMA1 10000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 3.4 Characteristic DC diagrams . 9 3.5 Characteristic AC diagrams 12 4 Package information SOT343 .19 Revision history . 20 Disclaimer 21 Datasheet 2 Revision 2.0 2019-01-25