BFP460 Surface mount wideband silicon NPN RF bipolar transistor Product description The BFP460 is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineons established fourth generation RF bipolar transistor family. Its transition frequency f of 22 GHz, low current and high robustness characteristics make the device T suitable for amplifiers. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 1.1 dB at 1.8 GHz, 3 V, 5 mA min High gain G = 17.5 dB at 1.8 GHz, 3 V, 20 mA ms OIP = 27.5 dBm at 1.8 GHz, 3 V, 20 mA 3 High ESD robustness, typical 1.5 kV (HBM) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Amplifier for remote keyless entry (RKE) Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio LNAs for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP460 / BFP460H6327XTSA1 SOT343 1 = E 2 = C 3 = E 4 = B ABs 3000 BFP460 / BFP460H6433XTMA1 10000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFP460 Surface mount wideband silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 3.4 Characteristic AC diagrams . 8 4 Package information SOT343 .13 Revision history . 14 Disclaimer 15 Datasheet 2 Revision 2.0 2019-01-25