BFM520,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFM520 Dual NPN wideband transistor Product specification 1996 Oct 08 Supersedes data of 1995 Sep 04NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 FEATURES PINNING - SOT363A Small size PIN SYMBOL DESCRIPTION Temperature and h matched FE 1b base 1 1 Low noise and high gain 2e emitter 1 1 High gain at low current and low capacitance at low 3c collector 2 2 voltage 4b base 2 2 Gold metallization ensures excellent reliability. 5e emitter 2 2 6c collector 1 1 APPLICATIONS Oscillator and buffer amplifiers 645 Balanced amplifiers handbook, halfpage c c 1 2 LNA/mixers. b b 1 2 DESCRIPTION e e 1 2 Dual transistor with two silicon NPN RF dies in a surface 1 2 3 mount 6-pin SOT363 (S-mini) package. The transistor is Top view MAM210 primarily intended for wideband applications in the Marking code: N2. GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and Fig.1 Simplified outline and symbol. satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Any single transistor C feedback capacitance I =0 V =3V f= 1MHz 0.4 pF re e CB f transition frequency I =20mA V =3V f= 900MHz 9 GHz T C CE 2 insertion power gain I =20mA V =3V 13 14.5 dB C CE s 21 f= 900MHz T =25 C amb G maximum unilateral power gain I =20mA V =3V 15 dB UM C CE f= 900MHz T =25 C amb F noise figure I =5mA V =3V 1.2 1.6 dB C CE f=900MHz = S opt R thermal resistance from junction single loaded 230 K/W th j-s to soldering point double loaded 115 K/W 1996 Oct 08 2