BFR106,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 DESCRIPTION PINNING NPN silicon planar epitaxial transistor PIN DESCRIPTION in a plastic SOT23 envelope. It is lfpage 3 Code: R7p primarily intended for low noise, 1 base general RF applications. 2emitter 3 collector 12 Top view MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO I DC collector current 100 mA C P total power dissipation up to T =70 C note 1 500 mW tot s h DC current gain I =50 mA V =9 V T =25 C25 80 FE C CE amb f transition frequency I =50 mA V = 9 V f = 500 MHz 5 GHz T C CE T =25 C amb G maximum unilateral power gain I =30 mA V = 6 V f = 800 MHz 11.5 dB UM C CE T =25 C amb V output voltage I =50 mA V =9 V R =75 350 mV o C CE L T =25 C d = 60 dB amb im f = 793.25 MHz (pqr) LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 3V EBO I DC collector current 100 mA C P total power dissipation up to T =70 C note 1 500 mW tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s September 1995 2