X-On Electronics has gained recognition as a prominent supplier of BFR540,215 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFR540,215 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFR540,215 NXP

BFR540,215 electronic component of NXP
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See Product Specifications
Part No.BFR540,215
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN 120MA 15V 9GHZ
Datasheet: BFR540,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1757 ea
Line Total: USD 527.1 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 1
3000 : USD 0.2396

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 1
3000 : USD 0.1757
18000 : USD 0.167

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.2078

   
Manufacturer
Product Category
Transistor Polarity
Pd - Power Dissipation
Maximum Operating Temperature
Package / Case
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No. Of Pins
Svhc
Associated Gain Ga
Continuous Collector Current Ic
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Gain Bandwidth Ft Typ
Hfe Min
No. Of Transistors
Noise Figure Typ
Output @ Third Order Intercept Point Ip3
Power @ 1Db Gain Compression P1db
Smd Marking
Termination Type
Test Frequency
Transistor Case Style
Voltage Vcbo
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFR540,215 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFR540,215 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFR540 NPN 9 GHz wideband transistor Rev. 6 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. 1.3 Applications RF front end wideband applications in the GHz range Analog and digital cellular telephones Cordless telephones (CT1, CT2, DECT, etc.) Radar detectors Satellite TV tuners (SATV) MATV/CATV amplifiers Repeater amplifiers in fiber-optic systems. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 20 V CBO V collector-emitter R =0 --15 V CES BE voltage I collector current (DC) - - 120 mA C 1 P total power dissipation T 70 C - - 500 mW tot sp h DC current gain I =40 mA V = 8 V 100 120 250 FE C CE C feedback capacitance I =i =0A V =8V -0.6 - pF re C c CB f=1MHz f transition frequency I =40 mA V =8V -9 - GHz T C CE f=1GHz G maximum unilateral I =40 mA V =8V UM C CE power gain T =25 C amb f=900MHz - 14 - dB f=2GHz - 7 - dB SOT23BFR540 NXP Semiconductors NPN 9 GHz wideband transistor Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit 2 s insertion power gain I =40 mA V =8V 12 13 - dB 21 C CE T =25 C amb f=900MHz NF noise figure = V =8V s opt CE T =25 C amb I =10mA -1.3 1.8 dB C f=900MHz I =40mA -1.9 2.4 dB C f=900MHz I =10mA -2.1 - dB C f=2GHz 1 T is the temperature at the soldering point of the collector tab. sp 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1base 3 3 2emitter 3 collector 1 12 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFR540 - plastic surface mounted package 3 leads SOT23 4. Marking Table 4. Marking 1 Type number Marking code BFR540 33* 1 * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China. BFR540 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 13 September 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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