Product Information

BFR540,215

BFR540,215 electronic component of NXP

Datasheet
RF Bipolar Transistors NPN 120MA 15V 9GHZ

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1873 ea
Line Total: USD 561.9

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 1
3000 : USD 0.2553

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 1
3000 : USD 0.1873
18000 : USD 0.178

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.2285

     
Manufacturer
Product Category
Transistor Polarity
Pd - Power Dissipation
Maximum Operating Temperature
Package / Case
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No. Of Pins
Svhc
Associated Gain Ga
Continuous Collector Current Ic
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Gain Bandwidth Ft Typ
Hfe Min
No. Of Transistors
Noise Figure Typ
Output @ Third Order Intercept Point Ip3
Power @ 1Db Gain Compression P1db
Smd Marking
Termination Type
Test Frequency
Transistor Case Style
Voltage Vcbo
LoadingGif

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BFR540 NPN 9 GHz wideband transistor Rev. 6 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. 1.3 Applications RF front end wideband applications in the GHz range Analog and digital cellular telephones Cordless telephones (CT1, CT2, DECT, etc.) Radar detectors Satellite TV tuners (SATV) MATV/CATV amplifiers Repeater amplifiers in fiber-optic systems. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 20 V CBO V collector-emitter R =0 --15 V CES BE voltage I collector current (DC) - - 120 mA C 1 P total power dissipation T 70 C - - 500 mW tot sp h DC current gain I =40 mA V = 8 V 100 120 250 FE C CE C feedback capacitance I =i =0A V =8V -0.6 - pF re C c CB f=1MHz f transition frequency I =40 mA V =8V -9 - GHz T C CE f=1GHz G maximum unilateral I =40 mA V =8V UM C CE power gain T =25 C amb f=900MHz - 14 - dB f=2GHz - 7 - dB SOT23BFR540 NXP Semiconductors NPN 9 GHz wideband transistor Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit 2 s insertion power gain I =40 mA V =8V 12 13 - dB 21 C CE T =25 C amb f=900MHz NF noise figure = V =8V s opt CE T =25 C amb I =10mA -1.3 1.8 dB C f=900MHz I =40mA -1.9 2.4 dB C f=900MHz I =10mA -2.1 - dB C f=2GHz 1 T is the temperature at the soldering point of the collector tab. sp 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1base 3 3 2emitter 3 collector 1 12 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFR540 - plastic surface mounted package 3 leads SOT23 4. Marking Table 4. Marking 1 Type number Marking code BFR540 33* 1 * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China. BFR540 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 13 September 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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