BFS540,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification 2000 May 30 Supersedes data of 1997 Dec 05NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION High power gain NPN transistor in a SOT323 plastic package. Low noise figure 3 handbook, 2 columns High transition frequency PINNING Gold metallization ensures excellent reliability PIN DESCRIPTION SOT323 package. 12 1base Top view MBC870 2 emitter APPLICATIONS 3 collector RF wideband amplifier applications Marking code: N4. such as satellite TV systems and RF portable communication equipment Fig.1 SOT323. with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO I DC collector current 120 mA C P total power dissipation T 80 C note 1 500 mW tot s h DC current gain I =40mA V =8V T =25 C 100 120 250 FE C CE j f transition frequency I =40mA V =8V f= 1GHz 9 GHz T C CE T =25 C amb G maximum unilateral power gain I =40mA V = 8 V f = 900 MHz 14 dB UM C CE T =25 C amb Fnoise figure I =10mA V = 8 V f = 900 MHz 1.3 1.7 dB C CE T =25 C amb Note 1. T is the temperature at the soldering point of the collector tab. s LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CES BE V emitter-base voltage open collector 2.5 V EBO I DC collector current 120 mA C P total power dissipation T 80 C note 1 500 mW tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s 2000 May 30 2