X-On Electronics has gained recognition as a prominent supplier of NE68133-T1B-R35-A RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. NE68133-T1B-R35-A RF Bipolar Transistors are a product manufactured by CEL. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

NE68133-T1B-R35-A CEL

NE68133-T1B-R35-A electronic component of CEL
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Part No.NE68133-T1B-R35-A
Manufacturer: CEL
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN Silicon AMP Oscilltr Transist
Datasheet: NE68133-T1B-R35-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.4647 ea
Line Total: USD 1394.1 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 1
3000 : USD 0.4647
3000 : USD 0.4527
3000 : USD 0.4406
3000 : USD 0.4225
6000 : USD 0.4225
15000 : USD 0.4225

   
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We are delighted to provide the NE68133-T1B-R35-A from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NE68133-T1B-R35-A and other electronic components in the RF Bipolar Transistors category and beyond.

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TE NE681M03 NEC s NPN SILICON TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 NEW M03 PACKAGE: 1.20.05 Smallest transistor outline package available Low profile/0.59 mm package height 0.80.1 Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: 2 fT = 7 GHz 1.4 0.1 0.45 LOW NOISE FIGURE: (0.9) 0.30.1 NF = 1.4 dB 0.45 3 1 0.20.1 DESCRIPTION NEC s NE681M03 transistor is ideal for low noise, high gain, 0.590.05 and low cost amplifier applications. NEC s new low profile/ +0.1 0.15 flat lead styleM03 package is ideal for today s portable -0.05 wireless applications. The NE681 is also available in chip, PIN CONNECTIONS Micro-x, and six different low cost plastic surface mount 1. Emitter package styles. 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER NE681M03 1 EIAJ REGISTERED NUMBER 2SC5433 PACKAGE OUTLINE M03 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 4.5 7.0 NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 1.4 2.7 2 S21E Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 10 12 2 hFE Forward Current Gain at VCE = 3 V, IC = 7 mA 80 145 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 A 0.8 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 A 0.8 3 CRE Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.9 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories DISCONTINUEDNE681M03 1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) ORDERING INFORMATION SYMBOLS PARAMETERS UNITS RATINGS PART NUMBER QUANTITY VCBO Collector to Base Voltage V 20 NE681M03-A VCEO Collector to Emitter Voltage V 10 NE681M03-T1-A VEBO Emitter to Base Voltage V 1.5 IC Collector Current mA 65 PT Total Power Dissipation mW 125 TJ Junction Temperature C 150 TSTG Storage Temperature C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25C) COLLECTOR CURRENT vs. FORWARD CURRENT GAIN vs. COLECTOR CURRENT COLLECTOR TO EMITTER VOLTAGE 65 500 VCE = 8 V 300 55 200 45 100 35 70 50 25 30 15 20 5 10 24 6 8 10 0 1 2 3 5 7 10 20 30 50 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) DISCONTINUED Collector Current, IC (mA) DC Forward Current Gain, hFE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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