BFU530R NXP

% BFU530 7 2 6 NPN wideband silicon RF transistor Rev. 1 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU530 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NF ) = 0.7 dB at 900 MHz min Maximum stable gain 21.5 dB at 900 MHz 11 GHz f silicon technology T 1.3 Applications Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit collector-base voltage open emitter - - 24 V V CB collector-emitter voltage open base - - 12 V V CE shorted base - - 24 V emitter-base voltage open collector - - 2 V V EB collector current - 10 40 mA I C 1 total power dissipation T 87 C -- 450 mW P tot sp DC current gain I =10 mA V =8V 60 95 200 h FE C CE collector capacitance V =8V f = 1MHz - 0.65 - pF C c CB transition frequency I =15 mA V = 8 V f = 900 MHz - 11 - GHz f T C CEBFU530 NXP Semiconductors NPN wideband silicon RF transistor Table 1. Quick reference data continued T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit 2 G maximum power gain I =10 mA V = 8 V f = 900 MHz - 21.5 - dB p(max) C CE NF minimum noise figure I =1 mA V = 8 V f = 900 MHz = -0.7 - dB min C CE S opt P output power at 1 dB gain I =15 mA V =8V Z =Z =50 -10 - dBm L(1dB) C CE S L compression f=900MHz 1 T is the temperature at the solder point of the collector lead. sp 2 If K > 1 then G is the maximum power gain. If K 1 then G =MSG. p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1 collector 2base 3emitter 4emitter DDD 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU530 - plastic surface-mounted package 4 leads SOT143B 1 - OM7962 - Customer evaluation kit for BFU520, BFU530 and BFU550 1 The customer evaluation kit contains the following: a) Unpopulated RF amplifier Printed-Circuit Board (PCB) b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) d) BFU520, BFU530 and BFU550 samples e) USB stick with data sheets, application notes, models, S-parameter and noise files 4. Marking Table 4. Marking Type number Marking Description BFU530 *TB * = t : made in Malaysia * = w : made in China BFU530 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 1 5 March 2014 2 of 22