TK NPN SILICON TRANSISTOR NE685M03 FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 NEW M03 PACKAGE: 1.20.05 Smallest transistor outline package available Low profile/0.59 mm package height 0.80.1 Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: 2 fT = 12 GHz 1.4 0.1 0.45 LOW NOISE FIGURE: (0.9) 0.30.1 NF = 1.5 dB at 2 GHz 0.45 3 1 DESCRIPTION 0.20.1 The NEC s NE685M03 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable 0.590.05 wireless communications and cellular radio applications. NEC s +0.1 0.15 new low profile/flat lead styleM03 package is ideal for today s -0.05 portable wireless applications. The NE685 is also available in PIN CONNECTIONS six different low cost plastic surface mount package styles. 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER NE685M03 1 EIAJ REGISTERED NUMBER 2SC5435 PACKAGE OUTLINE M03 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX fT Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz GHz 12 NF Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz dB 1.5 2.5 2 S21E Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz dB 7 9 2 hFE Forward Current Gain at VCE = 3 V, IC = 10 mA 75 140 ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 A 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 A 0.1 3 CRE Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.4 0.7 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern LaboratoriesNE685M03 1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 5 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 30 PT Total Power Dissipation mW 125 TJ Junction Temperature C 150 TSTG Storage Temperature C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25C) COLLECTOR CURRENT vs. D.C. FORWARD CURRENT GAIN COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 30 150 26 140 22 18 130 14 120 10 6 110 2 100 0 1.0 2.0 3.0 4.0 5.0 6.0 0 6 12 18 24 30 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) ORDERING INFORMATION PART NUMBER QUANTITY NE685M03-A NE685M03-T1-A Collector Current, IC (mA) DC Forward Current Gain, hFE