X-On Electronics has gained recognition as a prominent supplier of NE68519 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. NE68519 RF Bipolar Transistors are a product manufactured by Renesas. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

NE68519 Renesas

NE68519 electronic component of Renesas
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Part No.NE68519
Manufacturer: Renesas
Category: RF Bipolar Transistors
Description: Trans RF BJT NPN 6V 0.03A 3-Pin Ultra Super Mini-Mold
Datasheet: NE68519 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
334: USD 0.1833 ea
Line Total: USD 61.22 
Availability - 0
MOQ: 334  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 334
Multiples : 1
334 : USD 0.1833

   
Manufacturer
Product Category
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Mounting Style
Collector- Base Voltage Vcbo
Operating Temp Range
Pin Count
Number Of Elements
Operating Temperature Classification
Category
Rad Hardened
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We are delighted to provide the NE68519 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NE68519 and other electronic components in the RF Bipolar Transistors category and beyond.

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NEC S SURFACE MOUNT NPN NE685 SERIES SILICON HIGH FREQUENCY TRANSISTOR FEATURES LOW COST SMALL AND ULTRA SMALL SIZE PACKAGES LOW VOLTAGE/LOW CURRENT OPERATION HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz 19 (3 PIN ULTRA SUPER 18 (SOT 343 STYLE) MINI MOLD) NOISE FIGURES OF 1.5 dB AT 2.0 GHZ DESCRIPTION 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) NEC s family of high frequency, low cost, surface mount devices are well suited for portable wireless communications and cellular radio applications. The NE685 series of high fT (12 GHz) devices is suitable for very low voltage/low current, low noise applications. These products are ideal for applications up to 2.4 GHz where low cost, high gain, low voltage, and low current are prime con- 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) cerns. ELECTRICAL CHARACTERISTICS (TA = 25C) 1 PART NUMBER NE68518 NE68519 NE68530 NE68533 NE68539/39R 2 EIAJ REGISTERED NUMBER 2SC5015 2SC5010 2SC4959 2SC4955 2SC4957 PACKAGE OUTLINE 18 19 30 33 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 3V, IC = 10 mA, f = 2.0 GHz GHz 12 12 12 12 12 NFMIN Minimum Noise Figure at VCE = 3 V, IC = 3 mA, f = 2.0 GHz dB 1.5 2.5 1.5 2.5 1.5 2.5 1.5 2.5 1.5 2.5 GNF Associated Gain at VCE = 3V, IC = 3 mA, f = 2.0 GHz dB 8.5 7.5 7 7 7.5 MAG Maximum Available Gain at VCE = 3 V, IC = 10 mA, f = 2.0 GHz dB 12 11 10 10.5 11 2 S21E Insertion Power Gain at VCE = 3V, IC =10 mA, f = 2.0 GHz dB 9 11 7 9 7 8.5 7 8 9 10 3 hFE Forward Current Gain at VCE = 3 V, IC = 10 mA 75 110 150 75 110 150 75 110 150 75 110 150 75 110 150 ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 mA A 0.1 0.1 0.1 0.1 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA A 0.1 0.1 0.1 0.1 0.1 4 CRE Feedback Capacitance at VCB = 3 V, IE = 0 mA, f = 1 MHz pF 0.3 0.5 0.4 0.7 0.4 0.7 0.4 0.7 0.3 0.5 PT Total Power Dissipation mW 150 125 150 180 180 RTH(J-A) Thermal Resistance (Junction to Ambient) C/W 833 1000 833 620 620 RTH(J-C) Thermal Resistance(Junction to Case) C/W 200 200 200 200 200 Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 2. Electronic Industrial Association of Japan. 3. Pulsed measurement, PW 350 s, duty cycle 2%. 4. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. California Eastern Laboratories PLEASE NOTE:PLEASE NOTE: PLEASE NOTE:PLEASE NOTE:PLEASE NOTE: The following part numbersThe following part numbersThe following part numbers The following part numbersThe following part numbers from this datasheet are notfrom this datasheet are notfrom this datasheet are not from this datasheet are notfrom this datasheet are not recommended for new design.recommended for new design.recommended for new design.recommended for new design.recommended for new design. Please call sales office forPlease call sales office forPlease call sales office forPlease call sales office forPlease call sales office for details:details: details:details:details: NE68539RNE68539RNE68539R NE68539RNE68539R NE68530NE68530NE68530 NE68530NE68530 NE68533NE68533NE68533NE68533NE68533NE685 SERIES 1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) NE68530 SYMBOLS PARAMETERS UNITS RATINGS TYPICAL NOISE PARAMETERS (TA = 25C) VCBO Collector to Base Voltage V 9 FREQ. NFOPT GA OPT VCEO Collector to Emitter Voltage V 6 (MHz) (dB) (dB) MAG ANG Rn/50 VEBO Emitter to Base Voltage V 2.0 VCE = 0.5 V, IC = 0.5 mA IC Collector Current mA 30 500 0.95 10.87 0.81 15 1.20 800 1.05 7.82 0.75 24 1.02 TJ Junction Temperature C 150 1000 1.20 6.92 0.72 34 0.86 TSTG Storage Temperature C -65 to +150 VCE = 0.75 V, IC = 0.5 mA Note: 1.Operation in excess of any one of these parameters may 500 0.97 11.28 0.82 14 1.15 result in permanent damage. 800 1.15 8.64 0.76 24 1.00 1000 1.25 7.62 0.73 33 0.84 NE68518 VCE = 1.0 V, IC = 0.25 mA TYPICAL NOISE PARAMETERS (TA = 25C) 500 1.10 8.73 0.85 13 1.69 FREQ. NFOPT GA OPT 800 1.20 6.83 0.80 25 1.65 (MHz) (dB) (dB) MAG ANG Rn/50 1000 1.45 6.67 0.75 36 1.64 VCE = 1.0 V, IC = 0.5 mA VCE = 3 V, IC = 3 mA 500 0.95 11.93 0.78 12 1.02 500 1.00 21.32 0.63 26 0.56 800 1.12 8.71 0.76 22 0.99 800 1.15 16.29 0.59 31 0.44 1000 1.20 14.66 0.56 39 0.40 1000 1.28 8.35 0.69 32 0.86 1500 1.35 11.02 0.52 48 0.37 VCE = 1.0 V, IC = 0.75 mA 2000 1.50 8.67 0.47 53 0.33 500 0.90 12.92 0.77 11 0.92 2500 1.65 7.24 0.40 65 0.23 800 1.02 10.03 0.73 21 0.84 VCE = 3 V, IC = 5 mA 1000 1.18 9.23 0.67 30 0.69 500 1.20 21.15 0.55 19 0.47 VCE = 1.0 V, IC = 1.0 mA 800 1.25 17.29 0.51 31 0.42 500 0.88 14.48 0.75 13 0.82 1000 1.35 15.47 0.49 37 0.38 800 1.00 10.96 0.71 21 0.76 1500 1.45 11.87 0.46 44 0.35 1000 1.14 9.83 0.66 29 0.62 2000 1.60 9.57 0.42 53 0.33 VCE = 1.0 V, IC = 3.0 mA 2500 1.75 7.90 0.36 60 0.22 500 0.98 17.29 0.60 10 0.52 VCE = 3 V, IC = 10 mA 800 1.07 13.62 0.57 18 0.50 500 1.55 21.70 0.44 15 0.44 1000 1.15 12.01 0.54 25 0.47 800 1.60 18.13 0.40 30 0.41 2000 1.52 6.41 0.43 27 0.38 1000 1.65 16.20 0.38 36 0.39 VCE = 2.5 V, IC = 0.3 mA 1500 1.80 12.85 0.34 44 0.37 500 1.10 10.77 0.85 14 1.49 2000 1.90 10.60 0.30 50 0.34 800 1.30 7.48 0.81 22 1.45 2500 2.00 8.82 0.27 55 0.23 1000 1.47 6.76 0.78 30 1.37 VCE = 2.5 V, IC = 1 mA NE68519 500 0.85 15.44 0.73 12 0.91 TYPICAL NOISE PARAMETERS (TA = 25C) 800 1.04 11.52 0.72 19 0.75 1000 1.16 10.45 0.69 27 0.68 FREQ. NFOPT GA OPT 2000 1.60 5.16 0.54 33 0.47 (MHz) (dB) (dB) MAG ANG Rn/50 VCE = 2.5 V, IC = 3 mA VCE = 2.5 V, IC = 0.3 mA 500 1.08 18.11 0.65 11 0.60 500 1.07 12.6 0.80 17 1.70 800 1.15 14.37 0.60 17 0.53 800 1.25 8.6 0.79 32 1.55 1000 1.22 12.76 0.58 23 0.49 1000 1.55 6.7 0.75 42 1.41 2000 1.68 7.19 0.48 20 0.41 VCE = 2.5 V, IC = 1.0 mA VCE = 3 V, IC = 3 mA 500 0.87 16.9 0.73 14 0.80 500 1.10 18.10 0.65 10 0.58 800 0.99 12.8 0.67 27 0.65 800 1.19 14.27 0.61 14 0.50 1000 1.08 11.0 0.64 36 0.62 1000 1.25 12.77 0.60 23 0.49 1500 1.31 7.5 0.60 52 0.52 2000 1.48 7.20 0.50 20 0.42 2000 1.65 5.0 0.54 65 0.42 3000 1.74 5.22 0.32 28 0.22 VCE = 3 V, IC = 10 mA 500 1.05 19.3 0.65 14 0.57 800 1.12 15.8 0.58 27 0.50 1000 1.17 13.4 0.55 33 0.45 1500 1.31 9.9 0.50 47 0.38 2000 1.51 7.5 0.43 58 0.32 2500 1.75 5.5 0.32 69 0.21 VCE = 3 V, IC = 5.0 mA 500 1.33 19.4 0.58 13 0.54 800 1.40 15.3 0.52 26 0.49 1000 1.45 13.5 0.50 33 0.46 1500 1.57 10.0 0.43 46 0.42 2000 1.71 7.5 0.36 54 0.38 2500 1.90 5.6 0.29 60 0.31

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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