E B NPN SILICON RF TRANSISTOR NE856 SERIES NEC s NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz LOW NOISE FIGURE: 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION 00 (CHIP) 35 (MICRO-X) LOW COST DESCRIPTION NEC s NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is 32 (TO-92) 34 (SOT 89 STYLE) achieved by NEC s titanium/platinum/gold metallization sys- tem and their direct nitride passivated base surface process. The NE856 series is available in chip form and a Micro-x package for high frequency applications. It is also available in several low cost plastic package styles. 19 (3 PIN ULTRA SUPER MINI MOLD) 18 (SOT 343 STYLE) NE85600 NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 10 V, IC 7 mA 20 4.0 MSG 3.5 GA 15 MAG 10 3.0 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) 2.5 5 NFMIN 2.0 1.5 1.0 0.4 0.5 1.0 2 3 4 5 Frequency, f (GHz) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Date Published: June 28, 2005 PLEASE NOTE:PLEASE NOTE: PLEASE NOTE:PLEASE NOTE:PLEASE NOTE: The following part numbersThe following part numbers The following part numbersThe following part numbersThe following part numbers from this datasheet are notfrom this datasheet are notfrom this datasheet are not from this datasheet are notfrom this datasheet are not recommended for new design.recommended for new design.recommended for new design. recommended for new design.recommended for new design. Please call sales office forPlease call sales office forPlease call sales office forPlease call sales office forPlease call sales office for details:details: details:details:details: NE85635NE85635 NE85635NE85635NE85635 NE85639RNE85639RNE85639R NE85639RNE85639R Noise Figure, NF (dB) Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB)NE856 SERIES ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER NE85600 NE85618 NE85619 NE85630 NE85632 1 EIAJ REGISTERED NUMBER 2SC5011 2SC5006 2SC4226 2SC3355 PACKAGE OUTLINE 00 (CHIP) 18 19 30 32 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 10 V, IC = 20 mA GHz 7.0 6.5 6.5 VCE = 3 V, IC = 7 mA GHz 3.0 4.5 4.5 NF Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz dB 1.1 1.4 1.4 1.3 1.4 VCE = 10 V, IC = 7 mA, f = 2 GHz dB 2.1 2.1 2.2 2.2 GA Associated Gain at VCE = 10 V, IC = 7 mA, f = 1 GHz dB 13 12.5 12 10 f = 2 GHz dB 10 7 6.5 6 2 S21E Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz dB 11 13 12 12 9.5 f = 2 GHz dB 7 9 7 6 2 hFE Forward Current Gain at VCE = 10 V, IC = 20 mA 50 120 300 50 120 300 50 120 300 VCE = 3 V, IC = 7 mA 80 120 160 40 110 250 ICBO Collector Cutoff Current at VCB = 15 V, IE = 0 mA A 1.0 1.0 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA A 1.0 1.0 1.0 1.0 1.0 3 Cre Feedback Capacitance at VCB = 3 V, IE = 0 mA, f = 1 MHz pF 0.7 1.5 0.7 1.5 VCB = 10 V, IE = 0 mA, f = 1 MHz pF 0.5 1.0 0.5 0.9 0.65 1.0 PT Total Power Dissipation mW 700 150 100 150 600 RTH (J-A) Thermal Resistance (J-A) C/W 833 1000 833 210 ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER NE85633 NE85634 NE85635 NE85639/39R 1 EIAJ REGISTERED NUMBER 2SC3356 2SC3357 2SC3603 2SC4093 PACKAGE OUTLINE 33 34 35 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 10 V, IC = 20 mA GHz 7.0 6.5 7.0 9.0 NF Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz dB 1.4 2.0 1.4 1.5 2.1 f = 2 GHz dB 2.1 3.4 GA Associated Gain at VCE = 10 V, IC = 7 mA, f = 1 GHz dB 9 13.5 f = 2 GHz dB 10 8.5 2 S21E Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz dB 11.5 9.5 13 f = 2 GHz dB 7 9 7 2 hFE Forward Current Gain at VCE = 10 V, IC = 20 mA 50 120 300 50 120 300 50 120 300 50 120 300 ICBO Collector Cutoff Current at VCB = 15 V, IE = 0 mA A 1.0 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA A 1.0 1.0 1.0 1.0 3 Cre Feedback Capacitance at VCB = 10 V, IE = 0 mA, f = 1 MHz pF 0.55 1.0 0.65 1.0 0.5 1.0 0.5 0.9 4 PT Total Power Dissipation mW 200 2000 580 200 4 RTH (J-A) Thermal Resistance (J to A) C/W 625 62.5 590 500 Notes: 1. Electronic Industrial Association of Japan. 2. Pulse width 350 s, duty cycle 2% pulsed. 3. Cre measurement employs a three terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard terminal. 2 4. With 2.5 cm x 0.7 mm ceramic substrate (infinite heatsink).