X-On Electronics has gained recognition as a prominent supplier of UPA810T-T1-A RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. UPA810T-T1-A RF Bipolar Transistors are a product manufactured by CEL. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

UPA810T-T1-A CEL

UPA810T-T1-A electronic component of CEL
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See Product Specifications
Part No.UPA810T-T1-A
Manufacturer: CEL
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN High Frequency
Datasheet: UPA810T-T1-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.7171 ea
Line Total: USD 2151.3 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.7171

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Continuous Collector Current
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We are delighted to provide the UPA810T-T1-A from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UPA810T-T1-A and other electronic components in the RF Bipolar Transistors category and beyond.

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NPN SiGe RF ANALOG INTEGRATED CIRCUIT PA901TU NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD DESCRIPTION The PA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other 5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency, high gain, low power consumption. The device is packaged in surface mount 8-pin lead-less minimold plastic package. The device is fabricated with our SiGe HBT process UHS2-HV technology. FEATURES Output Power : Pout = 19 dBm Pin = 3 dBm, VCE = 3.6 V, f = 5.8 GHz Low Power : IC = 90 mA Pin = 3 dBm, VCE = 3.6 V, f = 5.8 GHz Single Power Supply Operation : VCE = 3.6 V Built-in bias circuit 8-pin lead-less minimold (2.0 2.2 0.5 mm) APPLICATIONS 5.8 GHz cordless phone 5.8 GHz band DSRC (Dedicated Short Range Communication) system 5.8 GHz video transmitter ORDERING INFORMATION Part Number Order Number Quantity Package Marking Supplying Form PA901TU PA901TU-A 50 pcs (Non reel) 8-pin lead-less A901 8 mm wide embossed taping PA901TU-T3 PA901TU-T3-A 5 kpcs/reel minimold (Pb-Free) Pin 1, Pin 8 face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10538EJ01V0DS (1st edition) Date Published October 2004 CP(K) DISCONTINUEDPA901TU PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 4.5 V Emitter to Base Voltage VEBO 2 V Collector Current of Q1 IC1 75 mA Collector Current of Q2 IC2 250 mA Bias Current IBIAS 25 mA Note Total Power Dissipation Ptot 410 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Operating Ambient Temperature TA 40 to +85 C Note Mounted on 20 20 0.8 mm (t) glass epoxy PCB (FR-4) THERMAL RESISTANCE (TA = +25C) Parameter Symbol Test Conditions Ratings Unit Note Channel to Ambient Resistance Rth (j-a1) 150 C/W Rth (j-a2) Free Air TBD C/W Note Mounted on 20 20 0.8 mm (t) glass epoxy PCB (FR-4) RECOMMENDED OPERATING RANGE (All Parameter) Parameter Symbol MIN. TYP. MAX. Unit Collector to Emitter Voltage VCE 3.6 4.5 V Total Current Itotal 90 300 mA Input Power Pin 3 +5 dBm 2 Data Sheet PU10538EJ01V0DS DISCONTINUED

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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