A Business Partner of Renesas Electronics Corporation. Preliminary JEITA Data Sheet NE85633 / 2SC3356 Part No. R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. VCE = 10 V, IC = 7 mA, f = 1 GHz High power gain : MAG = 13 dB TYP. VCE = 10 V, IC = 20 mA, f = 1 GHz <R> ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form NE85633 NE85633-A 3-pin Minimold 50 pcs (Non reel) 8 mm wide embossed taping 2SC3356 2SC3356-A (Pb-Free) NE85633-T1B NE85633-T1B-A 3 kpcs/reel Pin 3 (Collector) face the perforation side of the tape 2SC3356-T1B 2SC3356-T1B-A Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Note Free air CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. R09DS0021EJ0300 Rev.3.00 Page 1 of 7 Jun 28, 2011 PHASE-OUTA Business Partner of Renesas Electronics Corporation. NE85633 / 2SC3356 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 1.0 A Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 1.0 A Note 1 DC Current Gain hFE VCE = 10 V, IC = 20 mA 50 120 250 RF Characteristics Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA 7 GHz 2 Insertion Power Gain S21e VCE = 10 V, IC = 20 mA, f = 1 GHz 11.5 dB Noise Figure NF VCE = 10 V, IC = 7 mA, f = 1 GHz 1.1 2.0 dB Note 2 Reverse Transfer Capacitance Cre VCB = 10 V, IE = 0, f = 1 MHz 0.55 1.0 pF Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded <R> hFE CLASSIFICATION Rank Q/YQ R/YR S/YS Marking R23 R24 R25 hFE Value 50 to 100 80 to 160 125 to 250 R09DS0021EJ0300 Rev.3.00 Page 2 of 7 Jun 28, 2011 PHASE-OUT