X-On Electronics has gained recognition as a prominent supplier of NE85633-T1B-A RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. NE85633-T1B-A RF Bipolar Transistors are a product manufactured by CEL. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

NE85633-T1B-A CEL

NE85633-T1B-A electronic component of CEL
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Part No.NE85633-T1B-A
Manufacturer: CEL
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN High Frequency
Datasheet: NE85633-T1B-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.5019 ea
Line Total: USD 1505.7 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.5019

   
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Product Category
RoHS - XON
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Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
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Configuration
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We are delighted to provide the NE85633-T1B-A from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NE85633-T1B-A and other electronic components in the RF Bipolar Transistors category and beyond.

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A Business Partner of Renesas Electronics Corporation. Preliminary JEITA Data Sheet NE85633 / 2SC3356 Part No. R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. VCE = 10 V, IC = 7 mA, f = 1 GHz High power gain : MAG = 13 dB TYP. VCE = 10 V, IC = 20 mA, f = 1 GHz <R> ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form NE85633 NE85633-A 3-pin Minimold 50 pcs (Non reel) 8 mm wide embossed taping 2SC3356 2SC3356-A (Pb-Free) NE85633-T1B NE85633-T1B-A 3 kpcs/reel Pin 3 (Collector) face the perforation side of the tape 2SC3356-T1B 2SC3356-T1B-A Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Note Free air CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. R09DS0021EJ0300 Rev.3.00 Page 1 of 7 Jun 28, 2011 PHASE-OUTA Business Partner of Renesas Electronics Corporation. NE85633 / 2SC3356 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 1.0 A Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 1.0 A Note 1 DC Current Gain hFE VCE = 10 V, IC = 20 mA 50 120 250 RF Characteristics Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA 7 GHz 2 Insertion Power Gain S21e VCE = 10 V, IC = 20 mA, f = 1 GHz 11.5 dB Noise Figure NF VCE = 10 V, IC = 7 mA, f = 1 GHz 1.1 2.0 dB Note 2 Reverse Transfer Capacitance Cre VCB = 10 V, IE = 0, f = 1 MHz 0.55 1.0 pF Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded <R> hFE CLASSIFICATION Rank Q/YQ R/YR S/YS Marking R23 R24 R25 hFE Value 50 to 100 80 to 160 125 to 250 R09DS0021EJ0300 Rev.3.00 Page 2 of 7 Jun 28, 2011 PHASE-OUT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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