DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA863TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor 2 fT = 12.0 GHz TYP., S21e = 9.0 dB TYP. VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation 2 fT = 4.5 GHz TYP., S21e = 4.0 dB TYP. VCE = 1 V, IC = 5 mA, f = 2 GHz 6-pin lead-less minimold package BUILT-IN TRANSISTORS Q1 Q2 3-pin thin-type ultra super minimold part No. 2SC5436 2SC5800 ORDERING INFORMATION Part Number Quantity Supplying Form PA863TD-A 50 pcs (Non reel) 8 mm wide embossed taping PA863TD-T3-A 10 kpcs/reel Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape To order evaluation samples, consult your nearby sales office. Remark Unit sample quantity is 50 pcs. Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. P15686EJ1V0DS00 (1st edition) Date Published July 2001 NS CP(K)PA863TD ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Q1 Q2 Collector to Base Voltage VCBO 59 V Collector to Emitter Voltage VCEO 35.5 V Emitter to Base Voltage VEBO 21.5 V Collector Current IC 30 100 mA Note 90 190 Total Power Dissipation Ptot mW 210 in 2 elements Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C 2 Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB 2 Data Sheet P15686EJ1V0DS