X-On Electronics has gained recognition as a prominent supplier of NESG4030M14-A RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. NESG4030M14-A RF Bipolar Transistors are a product manufactured by CEL. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

NESG4030M14-A CEL

NESG4030M14-A electronic component of CEL
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Part No.NESG4030M14-A
Manufacturer: CEL
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors Low Noise, SiGe: C HBT 2V,6mA5.8GHz
Datasheet: NESG4030M14-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7839 ea
Line Total: USD 0.78

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 07 Aug to Tue. 13 Aug
MOQ : 1
Multiples : 1
1 : USD 0.7839
10 : USD 0.778
100 : USD 0.7195
250 : USD 0.6669
1000 : USD 0.6143
1500 : USD 0.6084

   
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RoHS - XON
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We are delighted to provide the NESG4030M14-A from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NESG4030M14-A and other electronic components in the RF Bipolar Transistors category and beyond.

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NPN SILICON GERMANIUM C RF TRANSISTOR NESG4030M14 NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. VCE = 2 V, IC = 6 mA, f = 5.8 GHz Maximum stable power gain: MSG = 15 dB TYP. VCE = 2 V, IC = 20 mA, f = 5.8 GHz SiGe:C HBT technology (UHS4) adopted Improvement of ESD protection 4-pin lead-less minimold (M14, 1208 PKG) ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form NESG4030M14 NESG4030M14-A 4-pin lead-less minimold 50 pcs 8 mm w ide embossed taping (M14, 1208 PKG) (Non reel) Pin 1 (Collector), Pin 4 (Emitter) face the (Pb-Free) perforation side of the tape NESG4030M14-T3 NESG4030M14-T3-A 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Note Collector to Base Voltage VCBO 5.0 V 1 Collector to Emitter Voltage VCEO 3.0 V Note 1 Base Current IB 12 mA Collector Current IC 35 mA Note 2 Total Pow er Dissipation Ptot 105 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Notes 1. VCBO and IB are limited by the permissible current of the protection element. 2 2. Mounted on 1.08 cm 1.0 mm (t) glass epoxy PWB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10728EJ02V0DS (2nd edition) Date Published August 2009 NS The mark <R> show s major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind w hat field. NESG4030M14 RECOMMENDED OPERATING RANGE (TA = +25C) Parameter Symbol MIN. TYP. MAX. Unit Input Pow er Pin 3 dBm Base Feedback Resister Rb 150 k Remark When the voltage return bias circuit like the figure below is used, a current increase is seen because the ESD protection element is turned on when recommended range of motion in the above table is exceeded. However, there is no influence of reliability, including deterioration. Data Sheet PU10728EJ02V0DS 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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