KP SILICON TRANSISTOR UPA895TD NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) LOW VOLTAGE, LOW CURRENT OPERATION Package Outline TD (TOP VIEW) SMALL PACKAGE OUTLINE: 1.00.05 1.2 mm x 0.8 mm +0.07 0.8 -0.05 LOW HEIGHT PROFILE: (Top View) Just 0.50 mm high Q1 C1 B1 1 6 TWO LOW NOISE OSCILLATOR TRANSISTORS: NE851 E2 E1 5 2 IDEAL FOR 1-3 GHz OSCILLATORS C2 Q2 B2 3 4 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) DESCRIPTION 4. Base (Q2) The UPA895TD contains two NE851 high frequency silicon 5. Emitter (Q2) 6. Base (Q1) bipolar chips. The NE851 is an excellent oscillator chip, featur- ing low 1/f noise and high immunity to pushing effects. The new ultra small TD package is ideal for all portable wireless applications where reducing board space is a prime consider- ation. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other ORDERING INFORMATION applications. PART NUMBER QUANTITY PACKAGING UPA895TD-T3-A 10K Pcs./Reel Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER UPA895TD PACKAGE OUTLINE TD SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 nA 600 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 600 1 hFE DC Current Gain at VCE = 3 V, IC = 7 mA 100 120 145 fT Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz GHz 5.0 6.5 2 Cre Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.6 0.8 2 S21E Insertion Power Gain at VCE = 1 V, IC =5 mA, f = 2 GHz dB 3.0 4.0 2 2 S21 S21E E Insertion Power GainIat VCE = 1 V, IC =15 mA, f = 2 GHz dB 4.5 5.5 NF Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz dB 1.9 2.5 Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. Q1 And Q2 +0.07 1.2 -0.05 0.8 0.50.05 0.4 0.4 3 2 1 4 5 6 +0.1 0.125 -0.05 0.150.05UPA895TD 1 NOISE FIGURE, ASSOCIATED GAIN ABSOLUTE MAXIMUM RATINGS (TA = 25C) vs. COLLECTOR CURRENT SYMBOLS PARAMETERS UNITS RATINGS 6 18 Q1 Q2 VCE = 2 V f = 2 GHz VCBO Collector to Base Voltage V 99 5 15 VCEO Collector to Emitter Voltage V 5.5 5.5 VEBO Emitter to Base Voltage V 1.5 1.5 4 12 Ga IC Collector Current mA 100 100 2 3 9 PT Total Power Dissipation mW 190 for 1 element 210 for 2 elements TJ Junction Temperature C 2 6 150 150 NF TSTG Storage Temperature C -65 to +150 1 3 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2 2. Mounted on 1.08cm x 1.0 mm(t) glass epoxy substrate. 0 0 1 10 100 Collector Current, IC (mA) TYPICAL PERFORMANCE CURVES (TA = 25C) REVERSE TRANSFR CAPACITANCE vs. TOTAL POWER DISSIPATION vs. COLLECTOR TO BASE VOLTAGE AMBIENT TEMPERATURE 1.0 300 f = 1 MHz Mounted on Glass Epoxy PCB 2 (1.08 cm x 1.0 mm (t) ) 250 0.8 210 2 Elements 200 190 180 0.6 150 0.4 100 1 Element 0.2 50 0 0 25 50 75 100 125 150 246810 Ambient Temperature, TA (C) Collector to Base Voltage, VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 100 100 VCE = 1 V VCE = 2 V 10 10 1 1 0.1 0.1 0.01 0.01 0.001 0.001 0.0001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage, VBE (V) Base to Emitter Voltage, VBE (V) Collector Current, IC (mA) Total Power Dissipation, Ptot (mW) Collector Current, IC (mA) Reverse Transfer Capacitance, Cre (pF) Noise Figure, NF (dB) Associated Gain, Ga (dB)