NESG250134-T1-AZ CEL

NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz MSG (Maximum Stable Gain) = 23 dB TYP., VCE = 3.6 V, Ic = 100 mA, f = 460 MHz Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 20 V 3-pin power minimold (34 package) ORDERING INFORMATION Part Number Quantity Supplying Form NESG250134-A 25 pcs (Non reel) 12 mm wide embossed taping NESG250134-T1-A 1 kpcs/reel Pin 2 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 9.2 V Emitter to Base Voltage VEBO 2.8 V Collector Current IC 500 mA Note Total Power Dissipation Ptot 1.5 W Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C 2 Note Mounted on 34.2 cm 0.8 mm (t) glass epoxy PWB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10422EJ02V0DS (2nd edition) The mark shows major revised points. Date Published July 2004 CP(K) NESG250134 THERMAL RESISTANCE (TA = +25C) Parameter Symbol Ratings Unit Termal Resistance from Junction to Rthj-a 80 C/W Note Ambient 2 Note Mounted on 34.2 cm 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = +25C) Parameter Symbol MIN. TYP. MAX. Unit Collector to Emitter Voltage VCE 3.6 4.5 V Collector Current IC 400 500 mA Note Input Power Pin 12 17 dBm Note Input power under conditions of VCE 4.5 V, f = 460 MHz 2 Data Sheet PU10422EJ02V0DS