SURFACE MOUNT NPN SILICON NE688 HIGH FREQUENCY TRANSISTOR SERIES FEATURES LOW PHASE NOISE DISTORTION LOW NOISE: 1.5 dB at 2.0 GHz LOW VOLTAGE OPERATION LARGE ABSOLUTE MAXIMUM COLLECTOR 19 (3 PIN ULTRA SUPER 18 (SOT 343 STYLE) CURRENT: IC MAX = 100 mA MINI MOLD) AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES ALSO AVAILABLE IN CHIP FORM DESCRIPTION NEC s NE688 series of NPN epitaxial silicon transistors are 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688 s low phase noise distortion and high fT make it an excellent choice for oscillator applications up to 5 GHz. The NE688 series is available in six different low cost plastic surface mount pack- age styles, and in chip form. 39R (SOT 143R STYLE) 39 (SOT 143 STYLE) ELECTRICAL CHARACTERISTICS (TA = 25C) 1 PART NUMBER NE68818 NE68819 NE68830 NE68833 NE68839/39R 2 EIAJ REGISTERED NUMBER 2SC5194 2SC5195 2SC5193 2SC5191 2SC5192/92R PACKAGE OUTLINE 18 19 30 33 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 1V, IC = 3 mA, f = 2.0 GHz GHz 4 5 4.5 5 4 4.5 4 4.5 4 4.5 fT Gain Bandwidth Product at VCE = 3V, IC = 20 mA, f = 2.0 GHz GHz 10 9.5 9 8.5 9 NFMIN Minimum Noise Figure at VCE = 1 V, IC = 3 mA, f = 2.0 GHz dB 1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5 NFMIN Minimum Noise Figure at VCE = 3 V, IC = 7 mA, f = 2.0 GHz dB 1.5 1.5 1.5 1.5 1.5 2 S21E Insertion Power Gain at VCE = 1V, IC = 3 mA, f = 2.0 GHz dB 3.0 4.0 3.0 4.0 2.5 3.5 2.5 3.5 4.0 4.5 2 S21E Insertion Power Gain at VCE = 3V, IC = 20 mA, f = 2.0 GHz dB 8.5 8 6.5 6.5 9 3 hFE Forward Current Gain at VCE = 1 V, IC = 3 mA 80 160 80 160 80 160 80 160 80 160 ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 mA nA 100 100 100 100 100 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA nA 100 100 100 100 100 4 CRE Feedback Capacitance at VCB = 1 V, IE = 0 mA, f = 1 MHz pF 0.65 0.8 0.7 0.8 0.75 0.85 0.75 0.85 0.65 0.8 PT Total Power Dissipation mW 150 125 150 200 200 RTH(J-A) Thermal Resistance (Junction to Ambient) C/W 833 1000 833 625 625 RTH(J-C) Thermal Resistance(Junction to Case) C/W Notes: 3. Pulsed measurement, PW 350 s, duty cycle 2%. 1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 4. The emitter terminal should be connected to the ground terminal of 2. Electronic Industrial Association of Japan. the 3 terminal capacitance bridge. California Eastern Laboratories PLEASE NOTE:PLEASE NOTE:PLEASE NOTE: PLEASE NOTE:PLEASE NOTE: The following part numbersThe following part numbersThe following part numbers The following part numbersThe following part numbers from this datasheet are notfrom this datasheet are notfrom this datasheet are notfrom this datasheet are notfrom this datasheet are not recommended for new design.recommended for new design. recommended for new design.recommended for new design.recommended for new design. Please call sales office forPlease call sales office for Please call sales office forPlease call sales office forPlease call sales office for details:details:details: details:details: NE68818NE68818NE68818 NE68818NE68818 NE68839NE68839NE68839NE68839NE68839 NE68839RNE68839R NE68839RNE68839RNE68839RNE688 SERIES 1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 6 VEBO Emitter to Base Voltage V 2.0 IC Collector Current mA 100 TJ Operating Junction Temperature C 150 TSTG Storage Temperature C -65 to +150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25C) NE68818, NE68830 NE68819 D.C. POWER DERATING CURVE D.C. POWER DERATING CURVE 200 150 Free Air Free Air 100 100 50 0 0 0 50 100 150 0 100 150 50 Ambient Temperature TA (C) Ambient Temperature TA (C) NE68833, NE68839 COLLECTOR CURRENT vs. D.C. POWER DERATING CURVE COLLECTOR TO EMITTER VOLTAGE 30 200 A Free Air 25 180 A 200 160 A 20 140 A 120 A 15 100 A 100 80 A 10 60 A 40 A 5 IB = 20 A 0 0 7 0 150 02.5 5 50 100 Ambient Temperature TA (C) Collector to Emitter Voltage, VCE (V) Total Power Dissipation, PT (mW) Total Power Dissipation, PT (mW) Collector Current, IC (mA) Total Power Dissipation, PT (mW)