NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. VCE = 6 V, Pin = 15 dBm, f = 460 MHz Pout = 30 dBm TYP. VCE = 6 V, Pin = 20 dBm, f = 900 MHz MSG (Maximum Stable Gain) = 23 dB TYP. VCE = 6 V, Ic = 100 mA, f = 460 MHz Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V 3-pin power minimold (34 PKG) ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form NESG260234 NESG260234-AZ 3-pin power minimold 25 pcs Magazine case Note1, 2 (Pb-Free) (Non reel) NESG260234-T1 NESG260234-T1-AZ 1 kpcs/reel 12 mm wide embossed taping Pin 2 (Emitter) face the perforation side of the tape Notes 1. Contains Lead in the part except the electrode terminals. 2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 25 V Collector to Emitter Voltage VCEO 9.2 V Emitter to Base Voltage VEBO 2.8 V Collector Current IC 600 mA Note Total Power Dissipation Ptot 1.9 W Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C 2 Note Mounted on 34.2 cm 0.8 mm (t) glass epoxy PWB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10547EJ02V0DS (2nd edition) The mark shows major revised points. Date Published May 2005 CP(K) NESG260234 THERMAL RESISTANCE (TA = +25C) Parameter Symbol Ratings Unit Termal Resistance from Junction to Rthj-a 65 C/W Note Ambient 2 Note Mounted on 34.2 cm 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = +25C) Parameter Symbol MIN. TYP. MAX. Unit Collector to Emitter Voltage VCE 6.0 7.2 V Collector Current IC 400 500 mA Note Input Power Pin 15 20 dBm Note Input power under conditions of VCE 6.0 V, f = 460 MHz 2 Data Sheet PU10547EJ02V0DS