T95 NEC s NPN SILICON HIGH NE696M01 FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M01 HIGH fT: 14 GHz TYP at 3 V, 10 mA LOW NOISE FIGURE: TOP VIEW NF = 1.6 dB TYP at 2 GHz 2.1 0.1 1.25 0.1 HIGH GAIN: 2 S21E = 14 dB TYP at 2 GHz 6 PIN SMALL MINI MOLD PACKAGE 1 6 0.65 EXCELLENT LOW VOLTAGE, LOW CURRENT 2.0 0.2 0.2 (All Leads) PERFORMANCE 5 2 1.3 3 4 SIDE VIEW DESCRIPTION 0.9 0.1 NEC s NE696M01 is an NPN high frequency silicon epitaxial 0.7 +0.10 transistor (NE685) encapsulated in an ultra small 6 pin SOT- 0.15 - 0.05 363 package. Its four emitter pins decrease emitter inductance 0 ~ 0.1 resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE696M01 is ideal for LNA and PIN OUT pre-driver applications up to 2.4 GHz where low cost, high gain, 1. Emitter 4. Emitter low voltage and low current are prime considerations. 5. Emitter 2. Emitter 3. Base 6. Collector Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER NE696M01 PACKAGE OUTLINE M01 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 A 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 A 0.1 1 hFE Forward Current Gain at VCE = 3 V, IC = 10 mA 80 120 160 fT Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz GHz 14 2 Cre Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.15 2 S21E Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz dB 14 NF Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz dB 1.6 Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. 3. For Tape and Reel version use part number NE696M01-T1, 3K per reel. California Eastern LaboratoriesNE696M01 1 NE696M01 ABSOLUTE MAXIMUM RATINGS (TA = 25C) SYMBOLS PARAMETERS UNITS RATINGS TYPICAL NOISE PARAMETERS (TA = 25C) VCBO Collector to Base Voltage V 9 FREQ. NFOPT GA OPT (GHz) (dB) (dB) MAG ANG Rn/50 VCEO Collector to Emitter Voltage V 6 VEBO Emitter to Base Voltage V 2 VCE = 1 V, IC = 3 mA IC Collector Current mA 30 1.0 1.4 18.5 0.53 79 0.27 1.4 1.46 16.4 0.47 95 0.13 PT Total Power Dissipation mW 150 1.7 1.55 15.2 0.43 111 0.19 TJ Junction Temperature C 150 2.0 1.8 14.5 0.39 132 0.16 3.0 2.3 11.0 0.3 177 0.10 TSTG Storage Temperature C -65 to +150 VCE = 2 V, IC = 1 mA Notes: 0.5 .94 16.8 0.72 41 0.52 1. Operation in excess of any one of these parameters may result 0.8 1.1 14.8 0.66 65 0.44 in permanent damage. 1.0 1.25 13.8 0.63 79 0.39 1.5 1.55 11.4 0.56 104 0.31 2.0 1.94 9.6 0.5 138 0.17 ORDERING INFORMATION 3.0 2.65 7.0 0.46 -173 0.07 VCE = 2 V, IC = 5 mA PART NUMBER QUANTITY PACKAGING 0.5 1.2 23.0 0.49 37 0.38 NE696M01-T1-A 3000 Tape & Reel 0.8 1.32 20.3 0.44 62 0.27 1.0 1.47 18.8 0.42 76 0.30 1.5 1.63 15.8 0.39 98 0.23 2.0 1.82 13.0 0.33 126 0.18 3.0 2.17 9.8 0.25 173 0.10 VCE = 3 V, IC = 5 mA 0.5 1.25 24.2 0.5 37 0.39 0.8 1.35 20.7 0.45 62 0.26 1.0 1.41 18.8 0.44 78 0.29 1.5 1.58 15.2 0.41 97 0.24 2.0 1.81 13.7 0.34 126 0.20 TYPICAL PERFORMANCE CURVES (TA = 25C) 3.0 2.29 12.0 0.29 164 0.09 TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 50 200 VCE = 2 V 40 30 100 20 10 0 0 0.5 1.0 0 50 100 150 Base to Emitter Voltage, VBE (V) Ambient Temperature, TA (C) DC CURRENT GAIN vs. COLLECTOR CURRENT vs. COLLECTOR CURRENT COLLECTOR TO EMITTER VOLTAGE 500 25 20 200 200 A VCE = 2 V 180 A 15 100 160 A 140 A 120 A 50 100 A 10 VCE = 1 V 80 A 60 A 5 20 40 A IB = 20 A 10 0 1 2 5 10 20 50 100 1.0 2.0 3.0 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) Collector Current, IC (mA) Total Power Dissipation, PT (mW) DC Current Gain, hFE Collector Current, IC (mA)