NE664M04-T2-A CEL

DATA SHEET NPN SILICON RF TRANSISTOR JEITA Part No. NE664M04 / 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for 460 MHz to 2.4 GHz medium output power amplification PO (1 dB) = 26.0 dBm TYP. VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm High collector efficiency: C = 60% UHS0-HV technology (fT = 25 GHz) adopted High reliability through use of gold electrodes Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number Quantity Supplying Form NE664M04-A 50 pcs (Non reel) 8 mm wide embossed taping 2SC5754-A Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape NE664M04-T2-A 3 kpcs/reel 2SC5754-T2-A Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10008EJ02V0DS (2nd edition) The mark shows major revised points. Date Published March 2003 CP(K) PHASE-OUTNE664M04 / 2SC5754 ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 13 V Collector to Emitter Voltage VCEO 5.0 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 500 mA Note Total Power Dissipation Ptot 735 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Note Mounted on 38 38 mm, t = 0.4 mm polyimide PCB THERMAL RESISTANCE Parameter Symbol Test Conditions Ratings Unit Junction to Ambient Resistance Rth j-a1 Mounted on 38 38 mm, t = 0.4 mm 170 C/W polyimide PCB Rth j-a2 Stand alone device in free air 570 C/W 2 Data Sheet PU10008EJ02V0DS PHASE-OUT