E B SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 00 (CHIP) 35 (MICRO-X) 12 dB at 2 GHz LOW COST DESCRIPTION The NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applica- tions. Both the chip and micro-x versions are suitable for 19 (3 PIN ULTRA amplifier applications up to 4 GHz. The NE681 die is also 18 (SOT 343 STYLE) SUPER MINI MOLD) available in six different low cost plastic surface mount pack- age styles. NE681 s unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain. 33 (SOT 23 STYLE) 30 (SOT 323 STYLE) NOISE FIGURE, GAIN MSG AND MAG vs. FREQUENCY VCE = 3 V, IC = 5 mA MSG 20 MAG 3.0 10 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) 2.0 0 GA NF 1.0 0.5 1.0 2.0 3.0 Frequency, f (GHz) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Date Published: June 28, 2005 DISCONTINUED Minimum Noise Figure, NF min (dB) Associated Gain, Maximum Stable Gain and Maximum Available Gain, GA, MSG, MAG (dB)NE681 SERIES ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER NE68100 NE68118 NE68119 NE68130 1 EIAJ REGISTERED NUMBER 2SC5012 2SC5007 2SC4227 PACKAGE OUTLINE 00 (CHIP) 18 19 30 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 8 V, IC = 20 mA GHz 9.0 9.0 VCE = 3 V, IC = 7 mA GHz 7.0 7.0 NF Noise Figure at VCE = 8 V, IC = 7 mA, f = 1 GHz dB 1.2 2.5 1.4 1.5 f = 2 GHz dB 1.6 2.3 1.8 1.6 GNF Associated Gain at VCE = 8 V, IC = 7 mA, f = 1 GHz dB 14 14 13.5 f = 2 GHz dB 12 10 9 2 S21E Insertion Power Gain at VCE = 8 V, IC = 20 mA, f = 1 GHz dB 17 13 15 14 13 f = 2 GHz dB 9 11 9 8 7.5 2 hFE Forward Current Gain at VCE = 8 V, IC = 20 mA 50 100 250 50 100 250 VCE = 3 V, IC = 7 mA 80 160 40 240 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA A 1.0 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA A 1.0 1.0 1.0 1.0 3 CRE Feedback Capacitance at VCB = 3 V, IE = 0 mA, f = 1 MHz pF 0.45 0.9 0.45 0.9 VCB = 10 V, IE = 0 mA, f = 1 MHz pF 0.2 0.7 0.25 0.8 RTH (J-A) Thermal Resistance (Junction to Ambient) C/W 80 833 1000 833 PT Total Power Dissipation mW 600 150 100 150 ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER NE68133 NE68135 NE68139/39R 1 EIAJ REGISTERED NUMBER 2SC3583 2SC3604 2SC4094 PACKAGE OUTLINE 33 35 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 8 V, IC = 20 mA GHz 9.0 9.0 9.0 VCE = 3 V, IC = 7 mA GHz NF Noise Figure at VCE = 8 V, IC = 7 mA, f = 1 GHz dB 1.2 2 1.2 2 f = 2 GHz dB 1.6 2.3 GNF Associated Gain at VCE = 8 V, IC = 7 mA, f = 1 GHz dB 13 13.5 f = 2 GHz dB 12 2 S21E Insertion Power Gain at VCE = 8 V, IC = 20 mA, f = 1 GHz dB 11 12.5 15 f = 2 GHz dB 7 9 11 8.5 2 hFE Forward Current Gain at VCE= 8 V, IC = 20 mA VCE = 3 V, IC = 7 mA 50 100 250 50 100 250 50 100 200 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA A 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA A 1.0 1.0 1.0 3 CRE Feedback Capacitance at VCB = 10 V, IE = 0 mA, f = 1 MHz pF 0.35 0.9 0.2 0.7 0.25 0.8 RTH (J-A) Thermal Resistance (Junction to Ambient) C/W 625 590 625 PT Total Power Dissipation mW 200 295 200 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed (PW 350 ms, duty cycle 2 %). 3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. DISCONTINUED