BFU768F,115 NXP

BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 24 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high linearity RF transistor 110 GHz f silicon germanium technology T Optimal linearity for low current and high gain Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM band and 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance: Low current: 10.8 mA Noise figure < 1.2 dB Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz High IP3: 15.7 dBm at 2.4 GHz, 18.8 dBm at 5 GHz Very fast on/off times Unconditionally stable Higher IP3, higher gain or lower noise figure possible with different application circuits 1.3 Applications High linearity applications Medium output power applications Wi-Fi / WLAN / WiMAX ZigBeeBFU768F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data Wi-Fi LNA applications circuits I = 10.8 mA V = 2.1 V T =25 C unless otherwise specified C CE amb Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 10 V CBO V collector-emitter voltage open base - - 2.8 V CEO V emitter-base voltage open collector - - 1.0 V EBO I collector current - - 70 mA C h DC current gain I =10mA V =2V 155 330 505 FE C CE T =25 C j 2 s insertion power gain f = 2.4 GHz - 13.1 - dB 21 f = 5.0 GHz - 12.2 - dB f = 5.9 GHz - 11.1 - dB NF noise figure f = 2.4 GHz - 1.1 - dB f= 5.0GHz - 1.1 - dB f= 5.9GHz - 1.2 - dB IP3 third-order intercept f = 2.4 GHz - 15.7 - dBm point f = 5.0 GHz - 18.8 - dBm f = 5.9 GHz - 18.8 - dBm 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU768F - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads BFU768F All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1.2 24 December 2012 2 of 12