BGA2712,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2712 MMIC wideband amplifier Product specification 2002 Sep 10 Supersedes data of 2002 Jan 31NXP Semiconductors Product specification MMIC wideband amplifier BGA2712 FEATURES PINNING Internally matched to 50 PIN DESCRIPTION Wide frequency range (3.2 GHz at 3 dB bandwidth) 1V S 2, 5 GND2 Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness) 3RFout 5 dBm saturated output power at 1 GHz 4GND1 Good linearity (11 dBm IP3 at 1 GHz) (out) 6RFin Unconditionally stable (K > 1.5). APPLICATIONS 6 5 4 1 LNB IF amplifiers Cable systems 63 ISM 4 2, 5 132 General purpose. Top view MAM455 DESCRIPTION Marking code: E2-. Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin Fig.1 Simplified outline (SOT363) and symbol. SOT363 SMD plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V DC supply voltage 5 6 V S I DC supply current 12.3 mA S 2 s insertion power gain f = 1 GHz 21.3 dB 21 NF noise figure f = 1 GHz 3.9 dB P saturated load power f = 1 GHz 4.8 dBm L(sat) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DC supply voltage RF input AC coupled 6V S I supply current 35 mA S P total power dissipation T 90 C 200 mW tot s T storage temperature 65 +150 C stg T operating junction temperature 150 C j P maximum drive power 10 dBm D CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2002 Sep 10 2