X-On Electronics has gained recognition as a prominent supplier of BGA2800,115 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. BGA2800,115 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

BGA2800,115 NXP

BGA2800,115 electronic component of NXP
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Part No.BGA2800,115
Manufacturer: NXP
Category: RF Amplifier
Description: NXP Semiconductors RF Amplifier 6CH MMIC Amp 3.7 dB 3.3V 10.5mA 3.2GHz
Datasheet: BGA2800,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2134 ea
Line Total: USD 0.21 
Availability - 6510
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6510
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2134
10 : USD 0.1716
100 : USD 0.121
1000 : USD 0.1001
3000 : USD 0.099
9000 : USD 0.0902
24000 : USD 0.088
99000 : USD 0.0858

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Pd - Power Dissipation
Operating Supply Current
Packaging
Brand
Number Of Channels
Factory Pack Quantity :
Bandwidth
Cnhts
Hts Code
Mxhts
Product Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BGA2800,115 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BGA2800,115 and other electronic components in the RF Amplifier category and beyond.

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BGA2800 MMIC wideband amplifier Rev. 5 13 July 2015 Product data sheet 1. Product profile 1.1 General description Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits Internally matched to 50 A gain of 20 dB at 250 MHz increasing to 20.6 dB at 2150 MHz Output power at 1 dB gain compression = 1 dBm Supply current = 10.5 mA at a supply voltage of 3.3 V Reverse isolation > 30 dB up to 2 GHz Good linearity with low second order and third order products Noise figure = 4 dB at 950 MHz Unconditionally stable (K > 1) 1.3 Applications LNB IF amplifiers General purpose low noise wideband amplifier for frequencies between DC and 2.2 GHz 2. Pinning information Table 1. Pinning Pin Description Simplified outline Graphic symbol 1V CC 2, 5 GND2 3RF OUT 4 GND1 6RF IN P V BGA2800 NXP Semiconductors MMIC wideband amplifier 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BGA2800 - plastic surface-mounted package 6 leads SOT363 4. Marking Table 3. Marking Type number Marking code Description BGA2800 *E7 * = - : made in Hong Kong * = p : made in Hong Kong * = W : made in China * = t : made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V supply voltage RF input AC coupled 0.5 +5.0 V CC I supply current - 55 mA CC P total power dissipation T = 90 C-200mW tot sp T storage temperature 40 +125 C stg T junction temperature - 125 C j P drive power - +10 dBm drive 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to P = 200 mW T =90 C 300 K/W th(j-sp) tot sp solder point 7. Characteristics Table 6. Characteristics V = 3.3 V Z = Z = 50 P = 40 dBm T = 25 C measured on demo board unless otherwise specified. CC S L i amb Symbol Parameter Conditions Min Typ Max Unit V supply voltage 3.0 3.3 3.6 V CC I supply current 8.8 10.5 12.1 mA CC BGA2800 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 5 13 July 2015 2 of 18

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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