X-On Electronics has gained recognition as a prominent supplier of BGA2866,115 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. BGA2866,115 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

BGA2866,115 NXP

BGA2866,115 electronic component of NXP
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Part No.BGA2866,115
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amplifier 6CH MMIC Amp 3.9 dB 5V 17.4mA 3.3GHz
Datasheet: BGA2866,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3119 ea
Line Total: USD 0.31 
Availability - 5430
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1488
6000 : USD 0.1488
12000 : USD 0.1488
15000 : USD 0.1488
45000 : USD 0.1488

8584
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2883
50 : USD 0.233
150 : USD 0.2092
500 : USD 0.1797
3000 : USD 0.1666
6000 : USD 0.1586

5430
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3119
10 : USD 0.2472
100 : USD 0.1744
1000 : USD 0.1432
3000 : USD 0.1351
9000 : USD 0.1305
24000 : USD 0.1282

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Pd - Power Dissipation
Operating Supply Current
Packaging
Brand
Number Of Channels
Factory Pack Quantity :
Bandwidth
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BGA2866,115 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BGA2866,115 and other electronic components in the RF Amplifier category and beyond.

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BGA2866 MMIC wideband amplifier Rev. 4 13 July 2015 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits Input internally matched to 50 A gain of 23.2 dB at 250 MHz increasing to 24.3 dB at 2150 MHz Output power at 1 dB gain compression = 4 dBm Supply current = 17.4 mA at a supply voltage of 5 V Reverse isolation > 32 dB up to 2150 MHz Good linearity with low second order and third order products Noise figure = 3.8 dB at 950 MHz Unconditionally stable (K > 1) No output inductor required 1.3 Applications LNB IF amplifiers General purpose low noise wideband amplifier for frequencies between DC and 2.2 GHz 2. Pinning information Table 1. Pinning Pin Description Simplified outline Graphic symbol 1V CC 6 5 4 1 2, 5 GND2 6 3 3RF OUT 4 GND1 4 2, 5 132 6RF IN sym052BGA2866 NXP Semiconductors MMIC wideband amplifier 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BGA2866 - plastic surface-mounted package 6 leads SOT363 4. Marking Table 3. Marking Type number Marking code Description BGA2866 *ED * = - : made in Hong Kong * = p : made in Hong Kong * = W : made in China * = t : made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V supply voltage RF input AC coupled 0.5 +7.0 V CC I supply current - 36 mA CC P total power dissipation T = 90 C-200mW tot sp T storage temperature 40 +125 C stg T junction temperature - 125 C j P drive power - +10 dBm drive 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to P = 200 mW T =90 C 300 K/W th(j-sp) tot sp solder point 7. Characteristics Table 6. Characteristics V = 5.0 V Z = Z = 50 P = 40 dBm T = 25 C measured on demo board unless otherwise specified. CC S L i amb Symbol Parameter Conditions Min Typ Max Unit V supply voltage 4.5 5.0 5.5 V CC I supply current 14.7 17.4 20.1 mA CC BGA2866 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 4 13 July 2015 2 of 18

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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