X-On Electronics has gained recognition as a prominent supplier of BGA420H6327XTSA1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. BGA420H6327XTSA1 RF Amplifier are a product manufactured by Infineon. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

BGA420H6327XTSA1 Infineon

Hot BGA420H6327XTSA1 electronic component of Infineon
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Part No.BGA420H6327XTSA1
Manufacturer: Infineon
Category: RF Amplifier
Description: Infineon Technologies RF Amplifier RF SI MMIC-Amp SIEGET 25 Tech
Datasheet: BGA420H6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
168: USD 0.2422 ea
Line Total: USD 40.69 
Availability - 1552
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 168  Multiples: 1
Pack Size: 1
Availability Price Quantity
2704
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7323
10 : USD 0.6228
25 : USD 0.6163
100 : USD 0.5555
250 : USD 0.5499
500 : USD 0.5494
1000 : USD 0.4923

1965
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.023
10 : USD 0.7095
100 : USD 0.5731
500 : USD 0.5302
1000 : USD 0.4796
3000 : USD 0.4576
6000 : USD 0.4312
9000 : USD 0.4191
24000 : USD 0.418

1552
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 168
Multiples : 1
168 : USD 0.2422
200 : USD 0.2405
500 : USD 0.239
1000 : USD 0.2373

29100
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.618

2180
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 813
Multiples : 1
813 : USD 0.5998
1000 : USD 0.5666

2704
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 16
Multiples : 1
16 : USD 0.4923

2861
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 813
Multiples : 1
813 : USD 0.5998
1000 : USD 0.5666

   
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We are delighted to provide the BGA420H6327XTSA1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BGA420H6327XTSA1 and other electronic components in the RF Amplifier category and beyond.

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BGA420 in SIEGET 25-Technologie Si-MMIC-Amplifier Cascadable 50 -gain block 3 Unconditionally stable 2 4 2 Gain S = 13 dB at 1.8 GHz 21 1 IP = +13 dBm at 1.8 GHz 3out (V = 3 V, I = typ. 6.7 mA) D D Noise figure NF = 2.2 dB at 1.8 GHz V D Reverse isolation > 28 dB and 4 return loss IN / OUT > 12 dB at 1.8 GHz 3 OUT Pb-free (RoHS compliant) package Circuit Diagram 1 IN 2 GND EHA07385 ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BGA420 BLs 1, IN 2, GND 3, OUT 4, VD SOT343 Maximum Ratings Parameter Symbol Value Unit 15 mA Device current I D 6 V Device voltage V D 90 mW Total power dissipation P tot T = 110 C S 0 dBm RF input power P RFin 150 C Junction temperature T j Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 stg Thermal Resistance 1) K/W Junction - soldering point R 410 thJS 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2011-07-26 1BGA420 Electrical Characteristics at T = 25 C, unless otherwise specified. A Parameter Symbol Values Unit min. typ. max. AC characteristics V = 3 V, Z = 50 D o 5.4 6.7 8 mA Device current I D 2 dB Insertion power gain S 21 f = 0.1 GHz 17 19 - f = 1 GHz 15 17 - f = 1.8 GHz 11 13 - 25 28 - Reverse isolation S12 f = 1.8 GHz Noise figure NF f = 0.1 GHz - 1.9 2.3 f = 1 GHz - 2.2 2.6 f = 1.8 GHz - 2.3 2.7 10 13 - dBm Intercept point at the output IP 3out f = 1 GHz -6 -2.5 - 1dB compression point P -1dB f = 1 GHz 8 11 - dB Return loss input RL in f = 1.8 GHz 12 16 - Return loss output RL out f = 1.8 GHz Typical biasing configuration +V D 100 pF RF OUT 100 pF 10 nF 4 3 BGA 420 12 100 pF GND RF IN EHA07386 Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device to provide a low impedance path. 2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground. 2011-07-26 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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