BGA2801,115 NXP

BGA2801 MMIC wideband amplifier Rev. 5 13 July 2015 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits Internally matched to 50 A gain of 22.2 dB at 250 MHz increasing to 23.0 dB at 2150 MHz Output power at 1 dB gain compression = 2 dBm Supply current = 14.3 mA at a supply voltage of 3.3 V Reverse isolation > 29 dB up to 2 GHz Good linearity with low second order and third order products Noise figure = 4 dB at 950 MHz 1.3 Applications LNB IF amplifiers General purpose low noise wideband amplifier for frequencies between DC and 2.2 GHz 2. Pinning information Table 1. Pinning Pin Description Simplified outline Graphic symbol 1V CC 2, 5 GND2 3RF OUT 4 GND1 6RF IN P 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BGA2801 - plastic surface-mounted package 6 leads SOT363 V BGA2801 NXP Semiconductors MMIC wideband amplifier 4. Marking Table 3. Marking Type number Marking code Description BGA2801 *E8 * = - : made in Hong Kong * = p : made in Hong Kong * = W : made in China * = t : made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V supply voltage RF input AC coupled 0.5 +5.0 V CC I supply current - 55 mA CC P total power dissipation T = 90 C-200mW tot sp T storage temperature 40 +125 C stg T junction temperature - 125 C j P drive power - +10 dBm drive 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to P = 200 mW T =90 C 300 K/W th(j-sp) tot sp solder point 7. Characteristics Table 6. Characteristics V = 3.3 V Z = Z = 50 P = 30 dBm T = 25 C measured on demo board unless otherwise specified. CC S L i amb Symbol Parameter Conditions Min Typ Max Unit V supply voltage 3.0 3.3 3.6 V CC I supply current 12.2 14.3 16.3 mA CC G power gain f = 250 MHz 21.6 22.2 22.8 dB p f = 950 MHz 21.7 22.4 23.1 dB f = 2150 MHz 21.5 23.0 24.4 dB RL input return loss f = 250 MHz 15 17 19 dB in f = 950 MHz 1517 19dB f = 2150 MHz 10 12 19 dB RL output return loss f = 250 MHz 13 17 22 dB out f = 950 MHz 1415 16dB f = 2150 MHz 10 12 15 dB BGA2801 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 5 13 July 2015 2 of 18