BGA6130,118 NXP

BGA6130 1 2 6 9 400 MHz to 2700 MHz 1 W high efficiency silicon amplifier + Rev. 2 12 February 2014 Product data sheet 1. General description The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount package. At 3.6 V it delivers 29.5 dBm output power at 3 dB gain compression with efficiency higher than 55 %. Its power saving features include simple quiescent current adjustment, which allows class-AB operation and logic-level shutdown control to reduce the supply current to 4 A. 2. Features and benefits 400 MHz to 2700 MHz frequency operating range Integrated active biasing External matching allows broad application optimization of the electrical performance Efficiencies higher than 55 % 3.6 V single supply operation Power-down Excellent robustness: All pins ESD protected (HBM 6 kV CDM 2 kV) Withstands mismatch of VSWR 50 : 1 through all phases Withstands electrical over-stress peaks of 4.5 V on the supply voltage 3. Applications In this data sheet two Industrial, Scientific and Medical (ISM) applications are described, namely ISM at 434 MHz and ISM at 915 MHz. The BGA6130 is also suited for a range of other applications: Broadband CPE / MoCA WLAN / ISM / RFID Wireless Sensor Network (WSN) Industrial applications Satellite Master Antenna TV (SMATV)BGA6130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high efficiency silicon amplifier 4. Quick reference data Table 1. Quick reference data 3.3 V V 3.9 V 40 C T +85 C P < 20 dBm R3 = 3900 (tolerance 10 %) input and output impedances SUP case i matched to 50 (see Section 14) pin ENABLE = HIGH unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 1 V supply voltage 3.3 3.6 3.9 V SUP 2 I total supply current 50 70 90 mA CC(tot) 2 1k R3 5k 30 - 250 mA 2 1k R3 5k pin ENABLE = LOW -4 6 A 3 T case temperature 40 +25 +85 C case f frequency 400 - 2700 MHz Measured at ISM-434 MHz (see Section 14) f frequency 433 434 435 MHz G power gain 433 MHz f 435 MHz 14 17 20 dB p P output power at 1 dB gain compression 433 MHz f 435 MHz 25 28 - dBm L(1dB) P output power at 3 dB gain compression 433 MHz f 435 MHz - 29.5 - dBm L(3dB) efficiency 433 MHz f 435 MHz at P -56 - % L(3dB) Measured at ISM-915 MHz (see Section 14) f frequency 902 915 928 MHz G power gain 902 MHz f 928 MHz 11 14 17 dB p P output power at 1 dB gain compression 902 MHz f 928 MHz 26 29 - dBm L(1dB) P output power at 3 dB gain compression 902 MHz f 928 MHz - 30 - dBm L(3dB) efficiency 902 MHz f 928 MHz at P -60 - % L(3dB) 1 Supply voltage on pins RF OUT and V . CC 2 Current through pins RF OUT and V . CC 3 T is the temperature at the soldering point of the exposed die pad. case 5. Design support Table 2. Available design support Download from the BGA6130 product page on