BGA7130,118 NXP

BGA7130 400 MHz to 2700 MHz 1 W high linearity silicon amplifier Rev. 1 9 October 2012 Product data sheet 1. General description The MMIC is a single-stage amplifier, offered in a leadless surface-mount package. It delivers 30 dBm output power at 1 dB gain compression and a superior performance up to 2700 MHz. Its power saving features include simple quiescent current adjustment and logic-level shutdown control to reduce the supply current to 4 A. 2. Features and benefits 400 MHz to 2700 MHz frequency operating range Integrated active biasing External matching allows broad application optimization of the electrical performance 5 V single supply operation Power-down Excellent robustness: All pins ESD protected (HBM 6 kV CDM 2 kV) Withstands mismatch of VSWR 50 : 1 through all phases Withstands electrical over-stress peaks of 7 V on the supply voltage 3. Applications In this data sheet two base station applications are described, namely LTE at 750 MHz and UMTS at 2140 MHz. The BGA7130 is also suited for a range of other applications: Wireless infrastructure (base station, repeater, backhaul systems) Broadband CPE / MoCA Industrial applications WLAN / ISM / RFID Satellite Master Antenna TV (SMATV) 4. Quick reference data Table 1. Quick reference data 4.75 V V 5.25 V 40 C T +85 C P < 20 dBm R3 = 523 (tolerance 1 %) input and output impedances SUP case i matched to 50 (see Section 14) pin ENABLE = HIGH unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 1 V supply voltage 4.75 - 5.25 V SUP 2 I total supply current 390 450 510 mA CC(tot) 2 500 R3 4.7 k 50 - 550 mA 2 500 R3 4.7 k pin ENABLE = LOW -4 6 A HVSON8BGA7130 NXP Semiconductors 400 MHz to 2700 MHz 1 W high linearity silicon amplifier Table 1. Quick reference data continued 4.75 V V 5.25 V 40 C T +85 C P < 20 dBm R3 = 523 (tolerance 1 %) input and output impedances SUP case i matched to 50 (see Section 14) pin ENABLE = HIGH unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 3 T case temperature 40 +25 +85 C case f frequency 400 - 2700 MHz Measured at LTE-750 MHz (see Section 14) 4 f frequency 728 748 768 MHz G power gain 728 MHz f 768 MHz 17 20 23 dB p P output power at 1 dB gain compression 728 MHz f 768 MHz 27 30.5 - dBm L(1dB) IP3 output third-order intercept point 728 MHz f 768 MHz 39 42.5 - dBm O P = 19 dBm per tone L tonespacing=1MHz Measured at UMTS-2140 MHz (see Section 14) 5 f frequency 2110 2140 2170 MHz G power gain 2110 MHz f 2170 MHz 9 12 15 dB p P output power at 1 dB gain compression 2110 MHz f 2170 MHz 27 30 - dBm L(1dB) IP3 output third-order intercept point 2110 MHz f 2170 MHz 40.5 44 - dBm O P = 19 dBm per tone L tonespacing=1MHz 1 Supply voltage on pins RF OUT and V . CC 2 Current through pins RF OUT and V . CC 3 T is the temperature at the soldering point of the exposed die pad. case 4 Covering downlink frequency range of eUTRAN bands 11, 13, 14 and 17. 5 Covering downlink frequency range of eUTRAN bands 1, 4 and 10. 5. Design support Table 2. Available design support Download from the BGA7130 product page on