BGD714,112 NXP

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGD714 750 MHz, 20.3 dB gain power doubler amplifier Product specification 2001 Nov 02 Supersedes data of 2001 Oct 29NXP Semiconductors Product specification 750 MHz, 20.3 dB gain power doubler BGD714 amplifier FEATURES PINNING - SOT115J Excellent linearity PIN DESCRIPTION Extremely low noise 1 input Excellent return loss properties 2, 3 common Silicon nitride passivation 5+V B Rugged construction 7, 8 common Gold metallization ensures excellent reliability. 9 output APPLICATIONS handbook, halfpage CATV systems operating in the 40 to 750 MHz 2 8 1 35 7 9 frequency range. DESCRIPTION Side view MSA319 Hybrid amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC). Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT G power gain f = 45 MHz 20 20.6 dB p f = 750 MHz 20.8 21.8 dB I total current consumption (DC) V =24V 380 410 mA tot B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT V supply voltage 30 V B V RF input voltage 70 dBmV i T storage temperature 40 +100 C stg T operating mounting base temperature 20 +100 C mb 2001 Nov 02 2