BGS8H2X NXP

BGS8H2 SiGe:C low-noise amplifier MMIC with bypass switch for LTE Rev. 4 20 August 2018 Product data sheet 1 General description The BGS8H2 is a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGS8H2 requires one external matching inductor. The BGS8H2 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of these low noise devices ensures the required receive sensitivity independent of cellular transmit power level in FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, the BGS8H2 can be switched off to operate in bypass mode at a 1 A current, to lower power consumption. The BGS8H2 is optimized for 2300 MHz to 2690 MHz. 2 Features and benefits Operating frequency from 2300 MHz to 2690 MHz Noise figure = 1.0 dB Gain 12.5 dB Bypass switch insertion loss of 2.3 dB High input 1 dB compression point of -1.5 dBm High in band IP3 of 4.0 dBm i Supply voltage 1.5 V to 3.1 V Self-shielding package concept Integrated supply decoupling capacitor Optimized performance at a supply current of 5.8 mA Power-down mode current consumption < 1 A Integrated temperature stabilized bias for easy design. Requires only one input matching inductor Input and output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm 0.4 mm pitch: SOT1232 180 GHz transit frequency - SiGe:C technology Moisture sensitivity level 1 XSON6NXP Semiconductors BGS8H2 SiGe:C low-noise amplifier MMIC with bypass switch for LTE 3 Applications LNA for LTE reception in smart phones Feature phones Tablet PCs RF front-end modules BGS8H2 All information provided in this document is subject to legal disclaimers. NXP B.V. 2018. All rights reserved. Product data sheet Rev. 4 20 August 2018 2 / 15