X-On Electronics has gained recognition as a prominent supplier of BGU6101,147 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. BGU6101,147 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

BGU6101,147 NXP

BGU6101,147 electronic component of NXP
BGU6101,147 NXP
BGU6101,147 RF Amplifier
BGU6101,147  Semiconductors

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See Product Specifications
Part No. BGU6101,147
Manufacturer: NXP
Category: RF Amplifier
Description: NXP Semiconductors RF Amplifier LNA MMIC 4GHz 2.4dB
Datasheet: BGU6101,147 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.06 ea
Line Total: USD 1.06 
Availability - 7663
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7663
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 1.06
10 : USD 0.7992
100 : USD 0.5643
500 : USD 0.5555
5000 : USD 0.5544

   
Manufacturer
Product Category
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Operating Supply Current
Packaging
Brand
Factory Pack Quantity :
Rohs Mouser
Cnhts
Hts Code
Mxhts
Product Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BGU6101,147 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BGU6101,147 and other electronic components in the RF Amplifier category and beyond.

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BGU6101 Wideband silicon low-noise amplifier MMIC Rev. 2 3 February 2012 Product data sheet 1. Product profile 1.1 General description The BGU6101 MMIC is an unmatched wideband MMIC featuring an integrated bias, enable function and wide supply voltage. BGU6101 is part of a family of three products (BGU6101, BGU6102 and BGU6104) and is optimized for 1 mA operation. 1.2 Features and benefits Supply voltage range from 1.5 V to 5 V Current range up to 10 mA at 3 V and 20 mA at 5 V supply voltage NF of 0.8 dB min Applicable between 40 MHz and 4 GHz Integrated temperature-stabilized bias for easy design Bias current configurable with external resistor Power-down mode current consumption < 6 A ESD protection on all pins up to 3 kV HBM Small 6-pin leadless package 2.0 mm 1.3 mm 0.35 mm 1.3 Applications FM radio RKE, TPMS Mobile TV, CMMB AMR, ZigBee, Bluetooth ISM WiFi, WLAN (2.4 GHz) Wireless security Low current applications 1.4 Quick reference data Table 1. Quick reference data T =25 C V = 3.0 V I = 1.5 mA V 1.2 V unless otherwise specified. All amb CC CC(tot) ENABLE measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit 2 s insertion power gain f = 450 MHz - 13.0 - dB 21 f = 900 MHz - 12.0 - dB f = 2400 MHz I = 3 mA - 13.0 - dB CC(tot) NF minimum noise figure f = 450 MHz - 0.8 - dB min f = 900 MHz - 0.8 - dB f = 2400 MHz I =3mA - 1.3 - dB CC(tot)BGU6101 NXP Semiconductors Wideband silicon low-noise amplifier MMIC Table 1. Quick reference data continued T =25 C V = 3.0 V I = 1.5 mA V 1.2 V unless otherwise specified. All amb CC CC(tot) ENABLE measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit P output power at 1 dB gain f = 450 MHz - 11.0 - dBm L(1dB) compression f = 900 MHz - 11.5 - dBm f = 2400 MHz I =3mA - 6.5 - dBm CC(tot) IP3 output third-order f = 450 MHz - 2.5 - dBm O intercept point f = 900 MHz - 2.0 - dBm f = 2400 MHz I =3mA - 6.5 - dBm CC(tot) 2. Pinning information 2.1 Pinning 1 6 2 5 3 4 Transparent top view Fig 1. Pin configuration 2.2 Pin description Table 2. Pin description Symbol Pin Description V 1 supply voltage CC n.c. 2 not connected RF IN 3 RF in RF OUT 4 RF out ENABLE 5 enable CUR ADJ 6 current adjust GND GND ground pad RF and DC ground 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BGU6101 HXSON6 plastic thermal enhanced super thin small outline SOT1209 package no leads 6 terminals body 2 x 1.3 x 0.35 mm BGU6101 All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 3 February 2012 2 of 20

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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