EVALUATION KIT AVAILABLE MAX2248 1.9GHz Power Amplifier General Description Benefits and Features The MAX2248 single-supply, low-voltage power amplifier Frequency Range: 1880MHz1930MHz (PA) IC is designed specifically for applications in the High +20dBm Output Power 1880MHz to 1930MHz frequency band. The PA provides 2-Bit Digital Power Control: Four Output Levels a +20dBm (100mW) output power in the highest power mode. Low 105mA Operating Current The PA includes a digital power control circuit to greatly 0.5A Low-Power Shutdown Mode Current simplify control of the output power. Four digitally +2.7V to +5V Single-Supply Operation controlled output power levels are provided: from +4dBm Small 3mm x 3mm, 16-Pin TQFN Package to +20dBm. A digital input controls the active or shutdown operating modes of the PA. In the shutdown mode, the Applications current reduces to 0.5A. 1.9GHz DECT (Cordless Phones and Wireless The MAX2248 integrates the RF input and inter-stage Headsets) matching to simplify application of the IC. Temperature and supply-independent biasing are also included to provide stable performance under all operating conditions. The IC operates from a +2.7V to +5V single-supply voltage. No negative bias voltage is required. Current consumption is a modest 105mA at the highest power level. Ordering Information appears at end of data sheet. This part is packaged in a 3mm x 3mm, 16-pin TQFN. Typical Application Circuit/Functional Block Diagram VCC VCC 1000pF 8.2 1000pF 8.2 VCC 18pF* 220pF* 1000pF 8.2 Z0 = 50 = 15 at 1.9GHz 220pF* VBIAS VCC MAX2248 D0 BIAS AND POWER D1 CONTROL 22nH SHDN T1 Z = 60 0 = 60 at 1.9GHz 8pF RFOUT 1.5nH RFIN T0 1pF 1pF Z = 50 0 = 18 at 1.9GHz OPEN CIRCUIT T2 GND GND Z = 65 0 = 45 at 1.9GHz * PLACEMENT OF THESE COMPONENTS IS CRITICAL (SEE APPLICATIONS SECTION) 19-100039 Rev 1 8/17 LOGIC INPUTSMAX2248 1.9GHz Power Amplifier Absolute Maximum Ratings BIAS, V , RFOUT to GND ....................................-0.3V to +6V Continuous Power Dissipation (T = +70C) CC A SHDN, D0, D1 to GND .............................-0.3V to V + 0.3V 16-Pin TQFN ..........................................................1176.5mW BIAS RFIN to GND ........................................................-0.7V to +0.7V Deration above T = +70C ....................................14.70mW/C A RF Input Power (RFIN) ..................................................+10dBm Operating Temperature Range ........................... -40C to +85C Input Current (SHDN, D0, D1) ......................... -10mA to +10mA Storage Temperature Range ............................ -65C to +150C Soldering Temperature (reflow) .......................................+260C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Package Information 16 TQFN PACKAGE CODE T1633+5 Outline Number 21-0136 Land Pattern Number 90-0032 THERMAL RESISTANCE, SINGLE-LAYER BOARD: Junction to Ambient ( ) 68C/W JA Junction to Case ( ) 10C/W JC THERMAL RESISTANCE, FOUR-LAYER BOARD: Junction to Ambient ( ) 48C/W JA Junction to Case ( ) 10C/W JC For the latest package outline information and land patterns (footprints), go to www.maximintegrated.com/packages. Note that a +, , or - in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status. Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial. Electrical Characteristics (Using Typical Application Circuit, V = +2.7V to +5V, P = 0dBm to +4dBm, f = 1880MHz to 1930MHz, SHDN = V , CC RFIN RFIN CC T = -40C to +85C, Typical values measured at V = +3.2V, P = +3dBm, f = 1.9GHz, T = +25C, unless otherwise noted. A CC RFIN RFIN A (Note 1)) PARAMETER CONDITIONS MIN TYP MAX UNITS DC ELECTRICAL CHARACTERISTICS D1 = Low, D0 = Low, T = +25C, P = +3dBm, A RFIN 73 90 V = 3.2V, f = 1.9GHz CC RFIN D1 = Low, D0 = Low (Note 8) 126 D1 = Low, D0 = High, T = +25C, P = +3dBm, A RFIN 76 95 V = 3.2V, f = 1.9GHz CC RFIN D1 = Low, D0 = High (Note 8) 130 Supply Current mA (Note 2, Note 3) D1 = High, D0 = Low, T = +25C, P = +3dBm, A RFIN 82 105 V = 3.2V, f = 1.9GHz CC RFIN D1 = High, D0 = Low (Note 8) 150 D1 = High, D0 = High, T = +25C, P = +3dBm, A RFIN 105 125 V = 3.2V, f = 1.9GHz CC RFIN D1 = High, D0 = High (Note 8) 202 Maxim Integrated 2 www.maximintegrated.com