Document Number: MMZ38333B NXPSemiconductors Rev. 0, 01/2017 Technical Data 3.8GHzLinearPowerAmplifierand BTSDriver MMZ38333BT1 High Efficiency/Linearity Amplifier TheMMZ38333Bisa3--stagehighlinearity InGaPHBTbroadbandamplifier designedforsmallcells andLTEbasestations.Itprovides exceptionallinearity for LTE air interface with an ACPR of 48 dBc at an output power greater than 22.3 dBm, covering frequencies from 3400 to 3800 MHz. It operates off a 5 V 34003800MHz,37dB,32dBm supply voltage. The amplifier is internally pre--matched with the flexibility to InGaPHBTLINEARAMPLIFIER change external matching to suit the final application and offers state--of--the-- art reliability, ruggedness, temperature stability and ESD performance. Typical Performance: V =V =V =V =5Vdc CC1 CC2 CC3 BIAS P G ACPR I out ps CC Frequency (dBm) (dB) (dBc) (mA) TestSignal (1) 3500 MHz 22.3 38.2 48.0 482 LTE 20 MHz (2) 3500 MHz 17.4 36.7 48.0 242 QFN4 4 (3) 3500 MHz 22.6 38.3 48.0 460 (1) 3700 MHz 21.6 38.0 48.0 470 (2) 3700 MHz 18.2 37.0 48.0 260 (3) 3700 MHz 22.8 37.7 48.0 495 1. High bias, high linearity. 2. Low bias, high linearity. 3. High power. Features Frequency: 34003800 MHz P1dB: 31.7 dBm 3600 MHz Power gain: 37 dB 3600 MHz Active bias control (adjustable externally) Power down control via V BIAS 5 volt supply Cost--effective 24--pin, 4 mm QFN surface mount plastic package V / CC1 RF RF V P out1 in2 CC2 DET V /RF CC3 out3 RF in1 V /RF CC3 out3 V /RF CC3 out3 BIAS CIRCUIT V V VV BA1 BA2 BIBIASAS Figure1.FunctionalBlockDiagram 2017 NXP B.V. MMZ38333BT1 RF Device Data NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Supply Voltage V 6 V CC Supply Current I 1200 mA CC RF Input Power P 30 dBm in Storage Temperature Range T 65 to +150 C stg Junction Temperature T 175 C J Table2.ThermalCharacteristics (1) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 90C, V =V =V = V =5 Vdc Stage 1 69 CC1 CC2 CC3 BIAS 83 Stage 2 26 Stage 3 Table3.ElectricalCharacteristics (V =V =V = V =5 Vdc, 3600 MHz, T =25 C, 50 ohm system, in NXP CW CC1 CC2 CC3 BIAS A Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) G 36.3 37.9 dB p Input Return Loss (S11) IRL 18.1 dB Output Return Loss (S22) ORL 13.0 dB Power Output 1dB Compression P1dB 31.7 dBm Supply Current I 349 376 404 mA CQ Supply Voltage V 5 V CC Table4.ESDProtectionCharacteristics TestMethodology Class Human Body Model (per JESD22--A114) 1C Charge Device Model (per JESD22--C101) C3 Table5.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C Table6.OrderingInformation Device TapeandReelInformation Package MMZ38333BT1 T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel QFN 4 4 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to