BGA2012,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2012 1900 MHz high linear low noise amplifier Product specification 2000 Dec 04 Supersedes data of 2000 Sep 06NXP Semiconductors Product specification 1900 MHz high linear low noise amplifier BGA2012 FEATURES PINNING Low current, low voltage PIN DESCRIPTION High linearity 1RF in High power gain 2V C Low noise 3V S Integrated temperature compensated biasing 4RF out Control pin for adjustment bias current. 5, 6 GND APPLICATIONS V handbook, halfpage S RF front end 6 5 4 Low noise amplifiers, e.g. CDMA, PHs, Dect, etc. RF out DESCRIPTION BIAS V C CIRCUIT Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN double polysilicon transistor 132 RF in GND with integrated biasing for low voltage applications in a Top view MBL251 6-pin SOT363 plastic SMD package. Marking code: A6- Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V DC supply voltage RF input AC coupled 3 4.5 V S I DC supply current 7.5 mA S I DC control current V =V 0.11 mA C C S 2 s insertion power gain in application circuit, see Fig.2 16 dB 21 f = 1900 MHz NF noise figure I = 7 mA f =1900 MHz 1.7 dB S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DC supply voltage RF input AC coupled 4.5 V S V voltage on control pin V V C S I supply current forced by DC voltage on RF input 15 mA S I control current 0.25 mA C P total power dissipation T 100 C 70 mW tot s T storage temperature 65 +150 C stg T operating junction temperature 150 C j 2000 Dec 04 2