BGA2001,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGA2001 Silicon MMIC amplifier Product specification 1999 Aug 11 Supersedes data of 1999 Jul 23NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 FEATURES PINNING Low current, low voltage PIN DESCRIPTION Very high power gain 1GND Low noise figure 2RF in Integrated temperature compensated biasing 3GND Supply and RF output pin combined. 4V +RFout S APPLICATIONS RF front end V +RFout handbook, halfpage S Wideband applications, e.g. analog and digital cellular 3 4 telephones, cordless telephones (PHS, DECT, etc.) Radar detectors BIAS CIRCUIT Low noise amplifiers Satellite television tuners (SATV) 21 High frequency oscillators. RFin GND Top view MAM430 DESCRIPTION Marking code: A1. Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage Fig.1 Simplified outline (SOT343R) and symbol. applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V DC supply voltage RF input AC coupled 4.5 V S I DC supply current V = 2.5 V RF input AC coupled 4.5 mA S VS-OUT MSG maximum stable gain V = 2.5 V f = 1.8 GHz 19.5 dB VS-OUT T =25 C amb NF noise figure V = 2.5 V f = 1.8 GHz = 1.3 dB VS-OUT S opt 1999 Aug 11 2