A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5337 Data Sheet R09DS0047EJ0300 NPN Silicon RF Transistor for High-Frequency Rev.3.00 Low Distortion Amplifier 4-Pin Power Minimold Sep 14, 2012 FEATURES Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. VCE = 10 V, IC = 50 mA Low noise NF = 1.5 dB TYP. VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. VCE = 10 V, IC = 50 mA, f = 1 GHz 4-pin power minimold package with improved gain from the 2SC4536 <R> ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form 2SC5337 2SC5337-AZ 4-pin power 25 pcs (Non reel) Magazine case minimold 2SC5337-T1 2SC5337-T1-AZ 1 kpcs/reel 12 mm wide embossed taping Note (Pb-Free) Collector face the perforation side of the tape Note Contains Lead in the part except the electrode terminals. Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 250 mA Note Total Power Dissipation Ptot 2.0 W Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C 2 Note Mounted on 16 cm 0.7 mm (t) ceramic substrate (Copper plating) CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. R09DS0047EJ0300 Rev.3.00 Page 1 of 5 Sep 14, 2012 A Business Partner of Renesas Electronics Corporation. 2SC5337 ELECTRICAL CHARACTERISTICS (TA = +25C) <R> Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 20 V, IE = 0 0.01 5.0 A Emitter Cut-off Current IEBO VBE = 2 V, IC = 0 0.03 5.0 A Note 1 DC Current Gain hFE VCE = 10 V, IC = 50 mA 60 120 200 RF Characteristics 2 Insertion Power Gain S21e VCE = 10 V, IC = 50 mA, f = 1 GHz 7.0 8.3 dB Note 2 Noise Figure (1) NF VCE = 10 V, IC = 50 mA, f = 500 MHz 1.5 3.5 dB Note 2 Noise Figure (2) NF VCE = 10 V, IC = 50 mA, f = 1 GHz 2.0 3.5 dB VCE = 10 V, IC = 50 mA, RS = RL = 75 , 2nd Order Intermoduration Distortion IM2 59.0 dB Vin = 105 dBV/75 , f1 = 190 MHz, f2 = 90 MHz, f = f1 f2 VCE = 10 V, IC = 50 mA, RS = RL = 75 , 3rd Order Intermoduration Distortion IM3 82.0 dB Vin = 105 dBV/75 , f1 = 190 MHz, f2 = 200 MHz, f = 2 f1 f2 Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. RS = RL = 50 , tuned <R> hFE CLASSIFICATION Rank QR/YQR QS/YQS Marking QR QS hFE Value 60 to 120 100 to 200 R09DS0047EJ0300 Rev.3.00 Page 2 of 5 Sep 14, 2012