X-On Electronics has gained recognition as a prominent supplier of NE68030-T1-A RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. NE68030-T1-A RF Bipolar Transistors are a product manufactured by CEL. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

NE68030-T1-A CEL

NE68030-T1-A electronic component of CEL
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Part No.NE68030-T1-A
Manufacturer: CEL
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN High Frequency
Datasheet: NE68030-T1-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.6845 ea
Line Total: USD 2053.5 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 1
3000 : USD 0.6845
3000 : USD 0.6845
3000 : USD 0.6201
3000 : USD 0.5499
6000 : USD 0.5265
12000 : USD 0.5031

   
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RoHS - XON
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Transistor Polarity
Continuous Collector Current
Pd - Power Dissipation
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We are delighted to provide the NE68030-T1-A from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NE68030-T1-A and other electronic components in the RF Bipolar Transistors category and beyond.

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E B SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. 19 (3 PIN ULTRA Both the chip and micro-x versions are suitable for applications 18 (SOT 343 STYLE) SUPER MINI MOLD) up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680 s high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is 35 mA. For higher current applications see the NE681 series. 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) NE68018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 25 6V, 5 m A 3V, 5 mA 20 15 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) 2.5 10 2.0 5 1.5 1.0 .5 300 500 1000 2000 3000 Frequency, f (GHz) California Eastern Laboratories DISCONTINUED Noise Figure, NF (dB) Associated Gain, GA (dB)NE680 SERIES ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER NE68000 NE68018 NE68019 1 EIAJ REGISTERED NUMBER 2SC5013 2SC5008 PACKAGE OUTLINE 00 (CHIP) 18 19 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 6 V, IC = 10 mA GHz 10 10 10 NF Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 1.6 1.7 f = 2 GHz dB 1.7 2.4 1.8 3 1.9 f = 4 GHz dB 2.6 GNF Associated Gain at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 14 13.5 f = 2 GHz dB 12.5 10.2 9.6 f = 4 GHz dB 8 MAG Maximum Available Gain at VCE = 6 V, IC = 10 mA f = 1 GHz dB 18.5 19 18.5 f = 2 GHz dB 16.2 12.7 11.8 f = 4 GHz dB 10.2 8.2 7.3 2 S21E Insertion Power Gain at VCE = 6 V, IC = 10 mA, f = 1 GHz dB 17 15.5 15 f = 2 GHz dB 10.5 12.5 7.5 9.8 9.2 f = 4 GHz dB 7.5 4.6 4.4 2 hFE Forward Current Gain at VCE = 6 V, IC = 10 mA 50 100 250 50 100 250 VCE = 3 V, IC = 5 mA 80 160 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA A 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1V, IC = 0 mA A 1.0 1.0 1.0 3 CRE Feedback Capacitance at VCB = 1 V, IE = 0 mA, f = 1 MHz pF 0.3 0.7 0.3 0.7 PT Total Power Dissipation mW 400 150 100 RTH (J-A) Thermal Resistance (Junction to Ambient) C/W 833 1000 RTH (J- C) Thermal Resistance (Junction to Case) C/W 120 200 200 ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER NE68030 NE68033 NE68035 NE68039/39R 1 EIAJ REGISTERED NUMBER 2SC4228 2SC3585 2SC3587 2SC4095 PACKAGE OUTLINE 30 33 35 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 6 V, IC = 10 mA GHz 10 10 10 10 NF Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 1.5 1.6 f = 2 GHz dB 1.7 1.8 3.0 1.7 2.4 1.7 2.5 f = 4 GHz dB 2.9 2.1 2.6 2.6 GNF Associated Gain at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 12.5 11.0 f = 2 GHz dB 9.4 9.0 12.5 11 f = 4 GHz dB 5.3 4.2 8 6.5 MAG Maximum Available Gain at VCE = 6 V, IC = 10 mA f = 1 GHz dB 17 17 18.5 18 f = 2 GHz dB 10.9 10.9 16.2 12.4 f = 4 GHz dB 6.8 6.7 10.2 8.7 2 S21E Insertion Power Gain at VCE = 6 V, IC = 10 mA, f = 1 GHz dB 13.5 13 17 14.5 f = 2 GHz dB 8.5 6.7 10.5 12.5 9.6 f = 2 GHz dB 3.6 3.7 7.5 4.9 2 hFE Forward Current Gain at VCE = 6 V, IC = 10 mA 50 100 250 50 100 250 50 100 250 VCE = 3 V, IC = 5 mA 50 100 250 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA A 1.0 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1V, IC = 0 mA A 1.0 1.0 1.0 1.0 3 Cre Feedback Capacitance at VCB = 3V, IE = 0 mA, f = 1 MHz pF 0.3 0.7 VCE = 10 V, IE = 0 mA, f = 1 MHz pF 0.3 0.8 0.2 0.7 0.25 0.8 PT Total Power Dissipation mW 150 200 290 200 RTH (J-A) Thermal Resistance (Junction to Ambient) C/W 833 620 550 620 RTH (J- C) Thermal Resistance (Junction to Case) C/W 200 200 200 200 Notes: 3. The emitter terminal should be connected to the ground 1. Electronic Industrial Association of Japan. terminal of the 3 terminal capacitance bridge. 2. Pulsed measurement, PW 350 s, duty cycle 2%. DISCONTINUED

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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