E B SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. 19 (3 PIN ULTRA Both the chip and micro-x versions are suitable for applications 18 (SOT 343 STYLE) SUPER MINI MOLD) up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680 s high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is 35 mA. For higher current applications see the NE681 series. 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) NE68018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 25 6V, 5 m A 3V, 5 mA 20 15 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) 2.5 10 2.0 5 1.5 1.0 .5 300 500 1000 2000 3000 Frequency, f (GHz) California Eastern Laboratories DISCONTINUED Noise Figure, NF (dB) Associated Gain, GA (dB)NE680 SERIES ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER NE68000 NE68018 NE68019 1 EIAJ REGISTERED NUMBER 2SC5013 2SC5008 PACKAGE OUTLINE 00 (CHIP) 18 19 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 6 V, IC = 10 mA GHz 10 10 10 NF Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 1.6 1.7 f = 2 GHz dB 1.7 2.4 1.8 3 1.9 f = 4 GHz dB 2.6 GNF Associated Gain at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 14 13.5 f = 2 GHz dB 12.5 10.2 9.6 f = 4 GHz dB 8 MAG Maximum Available Gain at VCE = 6 V, IC = 10 mA f = 1 GHz dB 18.5 19 18.5 f = 2 GHz dB 16.2 12.7 11.8 f = 4 GHz dB 10.2 8.2 7.3 2 S21E Insertion Power Gain at VCE = 6 V, IC = 10 mA, f = 1 GHz dB 17 15.5 15 f = 2 GHz dB 10.5 12.5 7.5 9.8 9.2 f = 4 GHz dB 7.5 4.6 4.4 2 hFE Forward Current Gain at VCE = 6 V, IC = 10 mA 50 100 250 50 100 250 VCE = 3 V, IC = 5 mA 80 160 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA A 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1V, IC = 0 mA A 1.0 1.0 1.0 3 CRE Feedback Capacitance at VCB = 1 V, IE = 0 mA, f = 1 MHz pF 0.3 0.7 0.3 0.7 PT Total Power Dissipation mW 400 150 100 RTH (J-A) Thermal Resistance (Junction to Ambient) C/W 833 1000 RTH (J- C) Thermal Resistance (Junction to Case) C/W 120 200 200 ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER NE68030 NE68033 NE68035 NE68039/39R 1 EIAJ REGISTERED NUMBER 2SC4228 2SC3585 2SC3587 2SC4095 PACKAGE OUTLINE 30 33 35 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 6 V, IC = 10 mA GHz 10 10 10 10 NF Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 1.5 1.6 f = 2 GHz dB 1.7 1.8 3.0 1.7 2.4 1.7 2.5 f = 4 GHz dB 2.9 2.1 2.6 2.6 GNF Associated Gain at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 12.5 11.0 f = 2 GHz dB 9.4 9.0 12.5 11 f = 4 GHz dB 5.3 4.2 8 6.5 MAG Maximum Available Gain at VCE = 6 V, IC = 10 mA f = 1 GHz dB 17 17 18.5 18 f = 2 GHz dB 10.9 10.9 16.2 12.4 f = 4 GHz dB 6.8 6.7 10.2 8.7 2 S21E Insertion Power Gain at VCE = 6 V, IC = 10 mA, f = 1 GHz dB 13.5 13 17 14.5 f = 2 GHz dB 8.5 6.7 10.5 12.5 9.6 f = 2 GHz dB 3.6 3.7 7.5 4.9 2 hFE Forward Current Gain at VCE = 6 V, IC = 10 mA 50 100 250 50 100 250 50 100 250 VCE = 3 V, IC = 5 mA 50 100 250 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA A 1.0 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1V, IC = 0 mA A 1.0 1.0 1.0 1.0 3 Cre Feedback Capacitance at VCB = 3V, IE = 0 mA, f = 1 MHz pF 0.3 0.7 VCE = 10 V, IE = 0 mA, f = 1 MHz pF 0.3 0.8 0.2 0.7 0.25 0.8 PT Total Power Dissipation mW 150 200 290 200 RTH (J-A) Thermal Resistance (Junction to Ambient) C/W 833 620 550 620 RTH (J- C) Thermal Resistance (Junction to Case) C/W 200 200 200 200 Notes: 3. The emitter terminal should be connected to the ground 1. Electronic Industrial Association of Japan. terminal of the 3 terminal capacitance bridge. 2. Pulsed measurement, PW 350 s, duty cycle 2%. DISCONTINUED