BFT25,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification November 1992NXP Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 DESCRIPTION PINNING NPN transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code: V1p It is primarily intended for use in RF 1base lfpage 3 low power amplifiers, such as in 2emitter pocket phones, paging systems, etc. 3 collector The transistor features low current consumption (100 A to 1 mA) due to its high transition frequency, it also 12 has excellent wideband properties Top view MSB003 and low noise up to high frequencies. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-base voltage open emitter 8V CBO V collector-emitter voltage open base 5V CEO I DC collector current 6.5 mA c P total power dissipation up to T =167 C note 1 30 mW tot s f transition frequency I =1mA V = 1 V f = 500 MHz 2.3 GHz T C CE T =25 C amb C feedback capacitance I =1mA V = 1 V f = 1 MHz 0.45 pF re C CE =25 C T amb G maximum unilateral power gain I =1mA V = 1 V f = 500 MHz 18 dB UM C CE T =25 C amb Fnoise figure I =1mA V = 1 V f = 500 MHz 3.8 dB C CE T =25 C amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 8V CBO V collector-emitter voltage open base 5V CEO V emitter-base voltage open collector 2V EBO I DC collector current 6.5 mA C I peak collector current f 1 MHz 10 mA CM P total power dissipation up to T = 167 C note 1 30 mW tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s November 1992 2