Product Information

BFT25,215

BFT25,215 electronic component of NXP

Datasheet
NXP Semiconductors RF Bipolar Transistors TAPE7 TNS-RFSS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 1
3000 : USD 0.2668
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 1.5043
10 : USD 0.7125
100 : USD 0.3867
500 : USD 0.3042
1000 : USD 0.2607
3000 : USD 0.2596
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification November 1992NXP Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 DESCRIPTION PINNING NPN transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code: V1p It is primarily intended for use in RF 1base lfpage 3 low power amplifiers, such as in 2emitter pocket phones, paging systems, etc. 3 collector The transistor features low current consumption (100 A to 1 mA) due to its high transition frequency, it also 12 has excellent wideband properties Top view MSB003 and low noise up to high frequencies. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-base voltage open emitter 8V CBO V collector-emitter voltage open base 5V CEO I DC collector current 6.5 mA c P total power dissipation up to T =167 C note 1 30 mW tot s f transition frequency I =1mA V = 1 V f = 500 MHz 2.3 GHz T C CE T =25 C amb C feedback capacitance I =1mA V = 1 V f = 1 MHz 0.45 pF re C CE =25 C T amb G maximum unilateral power gain I =1mA V = 1 V f = 500 MHz 18 dB UM C CE T =25 C amb Fnoise figure I =1mA V = 1 V f = 500 MHz 3.8 dB C CE T =25 C amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 8V CBO V collector-emitter voltage open base 5V CEO V emitter-base voltage open collector 2V EBO I DC collector current 6.5 mA C I peak collector current f 1 MHz 10 mA CM P total power dissipation up to T = 167 C note 1 30 mW tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s November 1992 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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