X-On Electronics has gained recognition as a prominent supplier of BFU530AR RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFU530AR RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFU530AR NXP

BFU530AR electronic component of NXP
BFU530AR NXP
BFU530AR RF Bipolar Transistors
BFU530AR  Semiconductors

Images are for reference only
See Product Specifications
Part No. BFU530AR
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: NXP Semiconductors RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Datasheet: BFU530AR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4367 ea
Line Total: USD 0.44 
Availability - 26381
Ship by Fri. 24 Jan to Tue. 28 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1362
Ship by Tue. 28 Jan to Mon. 03 Feb
MOQ : 56
Multiples : 1
56 : USD 0.63
300 : USD 0.5265
1500 : USD 0.4438

26381
Ship by Fri. 24 Jan to Tue. 28 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4367
10 : USD 0.3014
100 : USD 0.2596
500 : USD 0.2475
1000 : USD 0.2409
3000 : USD 0.2244
6000 : USD 0.2222
9000 : USD 0.2222

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Operating Temperature Range
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFU530AR from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFU530AR and other electronic components in the RF Bipolar Transistors category and beyond.

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BFU530A 7 2 6 NPN wideband silicon RF transistor Rev. 1 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NF ) = 0.6 dB at 900 MHz min Maximum stable gain 18 dB at 900 MHz 11 GHz f silicon technology T 1.3 Applications Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit collector-base voltage open emitter - - 24 V V CB collector-emitter voltage open base - - 12 V V CE shorted base - - 24 V emitter-base voltage open collector - - 2 V V EB collector current - 10 40 mA I C 1 total power dissipation T 87 C -- 450 mW P tot sp DC current gain I =10 mA V =8V 60 95 200 h FE C CE collector capacitance V =8V f = 1MHz - 0.67 - pF C c CB transition frequency I =15 mA V = 8 V f = 900 MHz - 11 - GHz f T C CEBFU530A NXP Semiconductors NPN wideband silicon RF transistor Table 1. Quick reference data continued T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit 2 G maximum power gain I =10 mA V = 8 V f = 900 MHz -18 - dB p(max) C CE NF minimum noise figure I =1 mA V = 8 V f = 900 MHz = -0.6 - dB min C CE S opt P output power at 1 dB gain I =15 mA V =8V Z =Z =50 -10 - dBm L(1dB) C CE S L compression f=900MHz 1 T is the temperature at the solder point of the collector lead. sp 2 If K > 1 then G is the maximum power gain. If K 1 then G =MSG. p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1base 2emitter 3 collector DDD 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU530A - plastic surface-mounted package 3 leads SOT23 1 - OM7961 - Customer evaluation kit for BFU520A, BFU530A and BFU550A 1 The customer evaluation kit contains the following: a) Unpopulated RF amplifier Printed-Circuit Board (PCB) b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) d) BFU520A, BFU530A and BFU550A samples e) USB stick with data sheets, application notes, models, S-parameter and noise files 4. Marking Table 4. Marking Type number Marking Description BFU530A HY* * = t : made in Malaysia * = w : made in China BFU530A All information provided in this document is subject to legal disclaimers. NXP B.V. 2014. All rights reserved. Product data sheet Rev. 1 13 January 2014 2 of 22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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