BFT92W,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The 3 handbook, 2 columns Gold metallization ensures BFT92W uses the same crystal as the excellent reliability SOT23 version, BFT92. SOT323 (S-mini) package. PINNING 12 APPLICATION MBC870 Top view PIN DESCRIPTION It is intended as a general purpose base transistor for wideband applications 1 Marking code: W1. up to 2 GHz. emitter 2 Fig.1 SOT323. collector 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO I collector current (DC) 35 mA C P total power dissipation up to T =93 C note 1 300 mW tot s DC current gain I = 15 mA V = 10 V 20 50 h FE C CE C feedback capacitance I =0 V = 10 V f = 1 MHz 0.5 pF re C CB f transition frequency I = 15 mA V = 10 V 4 GHz T C CE f = 500 MHz G maximum unilateral power gain I = 15 mA V = 10 V 17 dB UM C CE f = 500 MHz T =25 C amb F noise figure I = 5mA V = 10 V 2.5 dB C CE f = 500 MHz T junction temperature 150 C j Note 1. T is the temperature at the soldering point of the collector pin. s May 1994 2