BFT93,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification November 1992NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFT93 DESCRIPTION PINNING PNP transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code: X1p It is primarily intended for use in RF 1base lfpage 3 wideband amplifiers, such as in aerial 2emitter amplifiers, radar systems, 3 collector oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high 12 power gain due to its very high Top view MSB003 transition frequency, it also has excellent wideband properties and low noise up to high frequencies. Fig.1 SOT23. NPN complements are BFR93 and BFR93A. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-base voltage open emitter 15 V CBO V collector-emitter voltage open base 12 V CEO I DC collector current 35 mA c P total power dissipation up to T =95 C note 1 300 mW tot s f transition frequency I = 30 mA V = 5 V f = 500 MHz 5 GHz T C CE T =25 C j C feedback capacitance I = 2mA V = 5V f = 1 MHz 1 pF re C CE G maximum unilateral power gain I = 30 mA V = 5 V f = 500 MHz 16.5 dB UM C CE T =25 C amb Fnoise figure I = 10 mA V = 5 V f = 500 MHz 2.4 dB C CE T =25 C amb V output voltage d = 60 dB I = 30 mA 300 mV o im C V = 5 V R =75 CE L f = 493.25 MHz (pqr) Note 1. T is the temperature at the soldering point of the collector tab. s November 1992 2