X-On Electronics has gained recognition as a prominent supplier of BFU520WF RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFU520WF RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFU520WF NXP

BFU520WF electronic component of NXP
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Part No.BFU520WF
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: NXP Semiconductors RF Bipolar Transistors NPN wideband silicon RF transistor
Datasheet: BFU520WF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4554 ea
Line Total: USD 0.46 
Availability - 28620
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
28620
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4554
10 : USD 0.3432
100 : USD 0.1958
1000 : USD 0.1529
2500 : USD 0.1342
10000 : USD 0.1243
20000 : USD 0.1221
50000 : USD 0.1199

   
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We are delighted to provide the BFU520WF from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFU520WF and other electronic components in the RF Bipolar Transistors category and beyond.

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BFU520W 7 2 6 NPN wideband silicon RF transistor Rev. 1 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package. The BFU520W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NF ) = 0.6 dB at 900 MHz min Maximum stable gain 18.5 dB at 900 MHz 11 GHz f silicon technology T 1.3 Applications Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit collector-base voltage open emitter - - 24 V V CB collector-emitter voltage open base - - 12 V V CE shorted base - - 24 V emitter-base voltage open collector - - 2 V V EB collector current - 5 30 mA I C 1 total power dissipation T 87 C -- 450 mW P tot sp DC current gain I =5 mA V =8V 60 95 200 h FE C CE collector capacitance V =8V f = 1MHz - 0.55 - pF C c CB transition frequency I =10 mA V = 8 V f = 900 MHz - 10 - GHz f T C CEBFU520W NXP Semiconductors NPN wideband silicon RF transistor Table 1. Quick reference data continued T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit 2 G maximum power gain I =5 mA V = 8 V f = 900 MHz - 18.5 - dB p(max) C CE NF minimum noise figure I =1 mA V = 8 V f = 900 MHz = -0.6 - dB min C CE S opt P output power at 1 dB gain I =10 mA V =8V Z =Z =50 -7.0 - dBm L(1dB) C CE S L compression f=900MHz 1 T is the temperature at the solder point of the collector lead. sp 2 If K > 1 then G is the maximum power gain. If K 1 then G =MSG. p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1base 2emitter 3 collector DDD 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU520W - plastic surface-mounted package 3 leads SOT323 1 - OM7960 - Customer evaluation kit for BFU520W, BFU530W and BFU550W 1 The customer evaluation kit contains the following: a) Unpopulated RF amplifier Printed-Circuit Board (PCB) b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) d) BFU520W, BFU530W and BFU550W samples e) USB stick with data sheets, application notes, models, S-parameter and noise files 4. Marking Table 4. Marking Type number Marking Description BFU520W ZA* * = t : made in Malaysia * = w : made in China BFU520W All information provided in this document is subject to legal disclaimers. NXP B.V. 2014. All rights reserved. Product data sheet Rev. 1 13 January 2014 2 of 22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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