Product Information

BFU630F,115

BFU630F,115 electronic component of NXP

Datasheet
Transistors RF Bipolar Single NPN 21GHz

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6808 ea
Line Total: USD 0.68

11482 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11376 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 0.6808
10 : USD 0.5785
100 : USD 0.4174
500 : USD 0.3588
1000 : USD 0.3163
3000 : USD 0.2806
6000 : USD 0.2771
9000 : USD 0.2679
24000 : USD 0.2657

     
Manufacturer
Product Category
Transistor Type
Technology
Transistor Polarity
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Type
Brand
Factory Pack Quantity :
Rohs Mouser
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BFU630F NPN wideband silicon RF transistor Rev. 1 15 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high gain microwave transistor Noise figure (NF) = 0.85 dB at 2.4 GHz High maximum stable gain 26 dB at 1.8 GHz 40 GHz f silicon technology T 1.3 Applications Low noise amplifiers for microwave communications systems WLAN and CDMA applications Analog/digital cordless applications Ku band oscillators DROs LNB RKE AMR GPS ZigBee LTE, cellular, UMTS FM radio Mobile TV BluetoothBFU630F NXP Semiconductors NPN wideband silicon RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 16 V CBO V collector-emitter voltage open base - - 5.5 V CEO V emitter-base voltage open collector - - 2.5 V EBO I collector current - 3 30 mA C 1 P total power dissipation T 90 C - - 200 mW tot sp h DC current gain I =5mA V =2V 90 135 180 FE C CE T =25 C j C collector-base V =2V f=1MHz - 47 - fF CBS CB capacitance f transition frequency I =10mA V =2V -21 - GHz T C CE f= 2GHz T =25 C amb 2 G maximum power gain I =15mA V =2V - 24.5 - dB p(max) C CE f= 2.4GHz T =25 C amb NF noise figure I =3mA V =2V -0.85 - dB C CE f= 2.4GHz = S opt P output power at 1 dB I =30mA V =2.5 V -11.5 - dBm L(1dB) C CE gain compression Z =Z =50 S L f= 2.4GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG). p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU630F - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads BFU630F All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 15 December 2010 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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