BFU668F,115 NXP

BFU668F NPN wideband silicon RF transistor Rev. 3 24 January 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor in a plastic, 4-pin dual-emitter SOT343F package offering an innovative Ku-band DRO solution. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits DROs with good output power and low phase noise at very low current consumption: 5 dBm and 55 dBc/Hz/1 kHz at 12 mA Low-noise, high gain for low cost LNA solutions 40 GHz f silicon technology T 1.3 Applications Ku-band DROs in Ku-band LNBs C-band, low current LNAsBFU668F NXP Semiconductors NPN wideband silicon RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 16 V CBO V collector-emitter voltage open base - - 5.5 V CEO V emitter-base voltage open collector - - 2.5 V EBO I collector current - 15 40 mA C 1 P total power dissipation T 90 C -- 200mW tot sp h DC current gain I =10mA V =3.5 V 90 135 200 FE C CE T =25 C j C collector-base capacitance V = 2 V f = 1 MHz - 138 - fF CBS CB f transition frequency I =15mA V =3.5 V -20 - GHz T C CE f=2GHz T =25 C amb IP3 maximum output third-order I =15mA V =3.5 V -24 - dBm o(max) C CE intercept point f = 10 GHz T =25 C amb Z =Z =50 S L 2 G maximum power gain I =15mA V =3.5 V - 10.5 - dB p(max) C CE f = 10.0 GHz T =25 C amb NF noise figure I =15mA V =3.5 V -1.7 - dB C CE f = 10.0 GHz = S opt T =25 C amb P output power at 1 dB gain I =15mA V =3.5 V -12 - dBm L(1dB) C CE compression Z =Z =50 S L f = 10 GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G =MSG. p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 BFU668F All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 24 January 2012 2 of 14