BZX79C18/RADIAL NXP

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product data sheet 2002 Feb 27 Supersedes data of 1999 May 25 NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series FEATURES Total power dissipation: max. 500 mW Two tolerance series: 2%, and approx. 5% Working voltage range: nom. 2.4 to 75 V (E24 range) Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage ka APPLICATIONS MAM239 Low voltage stabilizers or voltage references. DESCRIPTION Low-power voltage regulator diodes in hermetically sealed The diodes are type branded. leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 2% (BZX79-B) and Fig.1 Simplified outline (SOD27 DO-35) and approx. 5% (BZX79-C) tolerance range. The series symbol. consists of 37 types with nominal working voltages from 2.4 to 75 V. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I continuous forward current 250 mA F I non-repetitive peak reverse current t = 100 s square wave see Tables 1 and 2 A ZSM p T = 25 C prior to surge j P total power dissipation T = 50 C note 1 400 mW tot amb T = 50 C note 2 500 mW amb P non-repetitive peak reverse power t = 100 s square wave 40 W ZSM p dissipation T = 25 C prior to surge see Fig.3 j T storage temperature 65 +200 C stg T junction temperature 65 +200 C j Notes 1. Device mounted on a printed circuit-board without metallization pad lead length max. 2. Tie-point temperature 50 C max. lead length 8 mm. ELECTRICAL CHARACTERISTICS Total BZX79-B and BZX79-C series T = 25 C unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MAX. UNIT V forward voltage I = 10 mA see Fig.4 0.9 V F F 2002 Feb 27 2