X-On Electronics has gained recognition as a prominent supplier of BLV57 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BLV57 RF Bipolar Transistors are a product manufactured by Advanced Semiconductor. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BLV57 Advanced Semiconductor

Name: BLV57
Brand: Advanced Semiconductor
SKU: BLV57_Advanced Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

BLV57 electronic component of Advanced Semiconductor

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See Product Specifications

Part No.	BLV57
Manufacturer:	Advanced Semiconductor
Category:	RF Bipolar Transistors
Description:	Transistors RF Bipolar RF Transistor
Datasheet:	BLV57 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 136.07 ea
Line Total: USD 136.07

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

BLV57 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 26 Nov to Thu. 28 Nov MOQ : 1 Multiples : 1	1 : USD 136.07 10 : USD 127.27 25 : USD 127.27 50 : USD 126.544 100 : USD 124.586 250 : USD 122.375 2500 : USD 122.364

We are delighted to provide the BLV57 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLV57 and other electronic components in the RF Bipolar Transistors category and beyond.

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Additional Infomation About Product

BLV57 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV57 is Designed for use as push-pull amplifier, primarily in linear UHF TV transmitting PACKAGE STYLE .400 8L FLG Applications. C D A B FULL R FEATURES: G O F E Input Matching Network .1925 Common emitter 4 x .060 R .125 H I Metalization System Omnigold J K with eutectic die bonding N M L MINIMUM MAXIMUM DIM MAXIMUM RATINGS inches / mm inches / mm .030 / 0.76 A I 2.0 A .115 / 2.92 .125 / 3.18 C B .360 / 9.14 C .065 / 1.65 .075 / 1.91 D V 50 V CESM .130 / 3.30 E .380 / 9.65 .390 / 9.91 F V 27 V .735 / 18.67 .765 / 19.43 CE G .645 / 16.38 .655 / 16.64 H .895 / 22.73 .905 / 22.99 I P 77 W T = 25 C C DISS .420 / 10.67 .430 / 10.92 J .003 / 0.08 .007 / 0.18 K T -65 C to +200 C .120 / 3.05 .130 / 3.30 J L .159 / 4.04 .175 / 4.45 M .280 / 7.11 N T -65 C to +150 C STG .395 / 10.03 .405 / 10.29 O 2.27 C/W JC ORDER CODE: ASI10646 O CHARACTERISTICS T = 25 C C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV I = 25 mA 27 V CEO C BV I = 10 mA 50 V CES C BV I = 5.0 mA 3.5 V EBO E I V = 27 V 10 mA E CES h V = 25 V I = 850 mA 15 --- FE CE C V = 25 V I = 1.7 A 2.5 CB E f GHz T V = 25 V I = 850 mA 2.5 CB E 8.0 P V = 25 V I = 850 mA f = 860 MHz dB G CE C IMD -60 dBc 1 P = 6.0 W OUT A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1 Specifications are subject to change without notice. X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for RF Bipolar Transistors category: Click to view products by Advanced Semiconductor manufacturer: Other Similar products are found below : MAPRST0912-50 MCH4016-TL-H MMBT5551-G MRF10120 15GN01CA-TB-E PH1214-25M MAPRST0912-350 MMBTH10-TP BFP 640F H6327 BFP 720F H6327 BFP 740F H6327 BFR 360F H6765 MRF10031 NSVF4009SG4T1G BFP 182R E7764 BFP405H6740XTSA1 MRF10350 BFR360FH6765XTSA1 BFP410H6327XTSA1 BFP620FH7764XTSA1 BFP720ESDH6327XTSA1 BFP720FH6327XTSA1 BFR360L3E6765XTMA1 BFP420H6433XTMA1 BFP420H6740XTSA1 BFP420H6801XTSA1 MCH4015-TL-H BF888H6327XTSA1 MMBT2222A-G BFP196WH6327XTSA1 BFP405FH6327XTSA1 BFP640ESDH6327XTSA1 BFR193L3E6327XTMA1 BFS483H6327XTSA1 NSVF4020SG4T1G NSVF6003SB6T1G MRF10005 BFP420FH6327XTSA1 BFP740FESDH6327XTSA1 BFR181E6327HTSA1 BFR181WH6327XTSA1 BFR182E6327HTSA1 BFR193E6327HTSA1 BFP181E7764HTSA1 BFP183WH6327XTSA1 BFP720H6327XTSA1 BFR182WH6327XTSA1 BFU590GX MAPR-000912-500S00 BFR340FH6327XTSA1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Advanced Semiconductor Advanced Semiconductor
Product Category RF Bipolar Transistors RF Bipolar Transistors
Transistor Type Bipolar Power Bipolar Power
Technology Silicon Silicon
Transistor Polarity Npn Npn
Operating Frequency 860 MHz 860 MHz
DC Collector/Base Gain hFE Min 15 15
Collector- Emitter Voltage VCEO Max 27 V 27 V
Emitter- Base Voltage VEBO 3.5 V 3.5 V
Continuous Collector Current 2 A 2 A
Pd - Power Dissipation 77 W 77 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 200 C + 200 C
Mounting Style Screw Screw
Package / Case SOT - 161A SOT - 161A
Packaging Tray Tray
Brand Advanced Semiconductor, Inc. Advanced Semiconductor, Inc.
Maximum Dc Collector Current 4 A 4 A
Rohs Mouser Y Y
Cnhts 8541210000 8541210000
Hts Code 8541210095 8541210095
Mxhts 85412101 85412101
Product Type Rf Bipolar Transistors Rf Bipolar Transistors
Subcategory Transistors Transistors
Taric 8541210000 8541210000