X-On Electronics has gained recognition as a prominent supplier of BFU520AVL RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFU520AVL RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFU520AVL NXP

BFU520AVL electronic component of NXP
BFU520AVL NXP
BFU520AVL RF Bipolar Transistors
BFU520AVL  Semiconductors

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See Product Specifications
Part No. BFU520AVL
Manufacturer: NXP
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN wideband silicon RF transistor
Datasheet: BFU520AVL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5875 ea
Line Total: USD 0.59 
Availability - 4437
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4437
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 0.5875
10 : USD 0.4775
100 : USD 0.3001
500 : USD 0.2068
1000 : USD 0.1617
2500 : USD 0.1485
5000 : USD 0.1441
10000 : USD 0.1199
20000 : USD 0.1177

   
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RoHS - XON
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We are delighted to provide the BFU520AVL from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFU520AVL and other electronic components in the RF Bipolar Transistors category and beyond.

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BFU520A 7 2 6 NPN wideband silicon RF transistor Rev. 1 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NF ) = 0.7 dB at 900 MHz min Maximum stable gain 18 dB at 900 MHz 11 GHz f silicon technology T 1.3 Applications Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit collector-base voltage open emitter - - 24 V V CB collector-emitter voltage open base - - 12 V V CE shorted base - - 24 V emitter-base voltage open collector - - 2 V V EB collector current - 5 30 mA I C 1 total power dissipation T 87 C -- 450 mW P tot sp DC current gain I =5 mA V =8V 60 95 200 h FE C CE collector capacitance V =8V f = 1MHz - 0.53 - pF C c CB transition frequency I =10 mA V = 8 V f = 900 MHz - 10 - GHz f T C CEBFU520A NXP Semiconductors NPN wideband silicon RF transistor Table 1. Quick reference data continued T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit 2 G maximum power gain I =5 mA V = 8 V f = 900 MHz -18 - dB p(max) C CE NF minimum noise figure I =1 mA V = 8 V f = 900 MHz = -0.7 - dB min C CE S opt P output power at 1 dB gain I =10 mA V =8V Z =Z =50 -7.0 - dBm L(1dB) C CE S L compression f=900MHz 1 T is the temperature at the solder point of the collector lead. sp 2 If K > 1 then G is the maximum power gain. If K 1 then G =MSG. p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1base 2emitter 3 collector DDD 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU520A - plastic surface-mounted package 3 leads SOT23 1 - OM7961 - Customer evaluation kit for BFU520A, BFU530A and BFU550A 1 The customer evaluation kit contains the following: a) Unpopulated RF amplifier Printed-Circuit Board (PCB) b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) d) BFU520A, BFU530A and BFU550A samples e) USB stick with data sheets, application notes, models, S-parameter and noise files 4. Marking Table 4. Marking Type number Marking Description BFU520A HZ* * = t : made in Malaysia * = w : made in China BFU520A All information provided in this document is subject to legal disclaimers. NXP B.V. 2014. All rights reserved. Product data sheet Rev. 1 13 January 2014 2 of 22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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