MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features Low-Noise Figure: NF=0.9 dB (typ.) ( f=1 GHz) 2 High Gain: S =12 dB (typ.) ( f=1 GHz) 21e Marking R 5 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Symbol Rating Unit Collector-emitter voltage V 13 V CES Collector-emitter voltage V 6 V CEO Emitter-base voltage V 0.6 V EBO Collector-current I 100 mA C Base-current I 10 mA B Collector power dissipation P 160 mW C Collector power dissipation P (Note 1) 700 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t)) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2007-12 1 2014-09-26 MT3S111 Microwave Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency f V =5 V, I =30 mA 9 11.5 GHz T CE C 2 S (1) V =5 V, I =30 mA, f=500 MHz 17.5 dB 21e CE C Insertion gain 2 S (2) V =5 V, I =30 mA, f=1 GHz 10 12 dB 21e CE C NF(1) V =5 V, I =30 mA, f=500 MHz 0.65 dB CE C Noise figure NF(2) V =5 V, I =30 mA, f=1 GHz 0.9 1.2 dB CE C rd V =5 V, I =30 mA, f=500 MHz, CE C 3 order intermodulation distortion output OIP 32 dBmW 3 intercept point f=1 MHz Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V =5 V, I =0 A 0.1 A CBO CB E DC current gain h V =5 V, I =30 mA 200 400 FE CE C Output capacitance C V =5 V, I =0 A, f=1 MHz 1.45 pF ob CB E Reverse transfer capacitance C V =5 V, I =0 A, f=1 MHz (Note 2) 0.9 1.2 pF re CB E Note 2: C is measured using a 3-terminal method with capacitance bridge re Caution: This device is sensitive to electrostatic discharge due to the high frequency transistor process of f =60 GHz class which is used for this product. T Please make tool and equipment earthed enough when you handle. 2 2014-09-26